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Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs

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Abstract

We have studied the Si doping efficiency in dilute nitride GaNAs by gas-source molecular beam epitaxy across a substrate temperature range from 460 to 570 °C. Particularly, for samples grown at ~480 °C, the doping efficiency changes drastically from 100 to almost 0 % as the N compositions varies from 0 to 3.1 %. By comparing experimental data to Monte Carlo simulation of N adatom surface diffusion during growth, the change in doping efficiency is believed to be due to passivation of Si dopants by N during epitaxy.

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Acknowledgments

This work is supported by the National Science Foundation under Grant No. DMR-0907652 and DMR-1106369.

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Authors and Affiliations

  1. Department of Physics, University of California, San Diego, La Jolla, CA, 92093, USA

    Y. J. Kuang

  2. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA, 92093, USA

    C. W. Tu

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Correspondence to Y. J. Kuang.

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Kuang, Y.J., Tu, C.W. Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs. Appl. Phys. A 120, 635–639 (2015). https://doi.org/10.1007/s00339-015-9228-7

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  • DOI: https://doi.org/10.1007/s00339-015-9228-7

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