Investigation of amorphous RuMoC alloy films as a seedless diffusion barrier for Cu/p-SiOC:H ultralow-k dielectric integration
- 181 Downloads
Ultrathin RuMoC amorphous films prepared by magnetron co-sputtering with Ru and MoC targets in a sandwiched scheme Si/p-SiOC:H/RuMoC/Cu were investigated as barrier in copper metallization. The evolution of final microstructure of RuMoC alloy films show sensitive correlation with the content of doped Mo and C elements and can be easily controlled by adjusting the sputtering power of the MoC target. There was no signal of interdiffusion between the Cu and SiOC:H layer in the sample of Cu/RuMoC/p-SiOC:H/Si, even annealing up to 500 °C. Very weak signal of oxygen have been confirmed in the RuMoC barrier layer both as-deposited and after being annealed, and a good performance on preventing oxygen diffusion has been proved. Leakage current and resistivity evaluations also reveal the excellent thermal reliability of this Si/p-SiOC:H/RuMoC/Cu film stack at the temperatures up to 500 °C, indicating its potential application in the advanced barrierless Cu metallization.
KeywordsSheet Resistance Energy Dispersive Spectrometer Energy Dispersive Spectrometer Result Resistivity Evaluation Copper Silicide
This work was supported by the National Natural Science Foundation of China (Grant No. 11075112), the Shenzhen Industry Development Fund Project (Project No. CXZZ20130322162305933) and the Shenzhen Engineering Laboratory Project (No. 2012-1127).
- 5.The International Technology Roadmap for Semiconductors. www.itrs.net, (2010 update)