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Improvement in R off/R on ratio and reset current via combining compliance current with multilayer structure in tantalum oxide-based RRAM

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Abstract

Improvements in the R off/R on ratio and reset current are required prior to the practical application of RRAM. To achieve this improvement, tantalum oxide-based RRAM devices with multilayer structure (bi-layer and tri-layer) were fabricated and various compliance currents were adopted. The reset current of 40 µA was observed; the R off/R on ratio increased to more than 20 in the tri-layer structure device. Resistance changes in two types of devices under voltage pulses with different pulse width were also conducted. The tri-layer device exhibited lower reset voltage and higher R off/R on ratio than the bi-layer device under voltage pulses. X-ray photoelectron spectroscopy demonstrated the formation of Ta2O5 via plasma oxidation, and there was an oxygen gradient in the multilayer devices. The results demonstrated that the tri-layer structure with oxygen gradient was an effective method for achieving better device performance. Additionally, it is implied that reasonable control of the proportion of TaO2 and Ta2O5 and compliance current can improve device performance.

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  1. Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Department of Micro/Nano Electronics, Shanghai Jiao Tong University, 800 Dongchuan Rd, Shanghai, 200240, People’s Republic of China

    Xiaorong Chen & Jie Feng

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  1. Xiaorong Chen
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  2. Jie Feng
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Correspondence to Jie Feng.

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Chen, X., Feng, J. Improvement in R off/R on ratio and reset current via combining compliance current with multilayer structure in tantalum oxide-based RRAM. Appl. Phys. A 120, 67–73 (2015). https://doi.org/10.1007/s00339-015-9170-8

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  • DOI: https://doi.org/10.1007/s00339-015-9170-8

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