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Improved phase change behavior of Sb3Te material by ZnSb doping for phase change memory

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Abstract

The crystallization characteristic, electrical, and optical properties of ZnSb-doped Sb3Te thin films have been systematically investigated. The results show that the crystalline phase, grain size, and the preferred orientation are influenced by ZnSb addition. Meanwhile, ZnSb doping can effectively increase the thermal stability of Sb3Te films such as crystallization temperature and crystallization activation energy, and maintain fast crystallization speed. Among ZnSb-doped Sb3Te films, Zn5.3Sb72.7Te22.0 film exhibits both shorter complete crystallization time (135 ns at 70 mW) and appropriate thermal stability (keeping the amorphous state at 107.2 °C for 10 years).

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Acknowledgments

This work was financially supported by the National Program on Key Basic Research Project (973 Program) (Grant No. 2012CB722703), the Natural Science Foundation of China (Grant No. 61306147), the Key Program for International S&T Cooperation Projects of China (Grant No. 2001DFA12040), the Young Leaders of academic climbing project of the Education Department of Zhejiang Province (pd2013092).

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Authors and Affiliations

  1. Department of Physics, Institute of Precision Optical Engineering, Tongji University, Shanghai, 200092, China

    Xiang Shen & Zhanshan Wang

  2. Laboratory of Infrared Material and Devices, The Advanced Technology Research Institute, Ningbo University, Ningbo, 315211, China

    Xiang Shen, Yimin Chen, Yegang Lu & Shixun Dai

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  1. Xiang Shen
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  2. Yimin Chen
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  3. Zhanshan Wang
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  4. Yegang Lu
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  5. Shixun Dai
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Correspondence to Xiang Shen.

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Shen, X., Chen, Y., Wang, Z. et al. Improved phase change behavior of Sb3Te material by ZnSb doping for phase change memory. Appl. Phys. A 119, 425–429 (2015). https://doi.org/10.1007/s00339-014-8938-6

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  • DOI: https://doi.org/10.1007/s00339-014-8938-6

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