Abstract
Arrays of diamond photoemitters with silicon-vacancy (SiV) photoluminescent (PL) centers have been produced by epitaxy of CVD diamond inside laser-ablated channels in a-Si mask on single crystal or polycrystalline diamond substrates, the mask also serving as Si-doping source. Strong PL emission from the SiV centers with zero-phonon line at 738.6 nm wavelength (6 nm width, 0.8 ns decay time), localized within the photoemitters, has been measured.
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Acknowledgments
The work was supported by Russian Scientific Foundation, grant No. 14-12-01403. The SEM study has been carried out at Mendeleev Center of Shared Scientific Equipment. The authors are grateful to K. Tukmakov for a-Si film deposition, E. Zavedeev for optical profilometry, V. Yurov for his help in PL map data processing and A. Popovich for the assistance in sample preparation.
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Sovyk, D., Ralchenko, V., Komlenok, M. et al. Fabrication of diamond microstub photoemitters with strong photoluminescence of SiV color centers: bottom-up approach. Appl. Phys. A 118, 17–21 (2015). https://doi.org/10.1007/s00339-014-8877-2
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DOI: https://doi.org/10.1007/s00339-014-8877-2