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Enhanced performances of organic thin film transistors by dual interfacial modification of dielectric layer

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Abstract

In this paper, we demonstrate an effective method for the performance improvement of organic thin film transistors (OTFTs), in which the SiO2 dielectric layer was dually modified with polystyrene (PS) and hexamethyldisilazane (HMDS) self-assembled monolayer. The relationship between interfacial modification and device performance of OTFTs was systematically investigated. With the dual HMDS/PS modification, the SiO2 dielectric film turns from intrinsically hydrophilic surface to hydrophobic one. Moreover, the dual HMDS/PS modification induces the ordered growth of pentacene layer with large grains up to about 1.5 μm. As a result, the performance of OTFTs is remarkably enhanced, such as the increase in charge carrier mobility from 0.56 to 1.05 cm2/Vs and the increase in on/off current ratio from 105–106 to 106–107. These results indicate that the dual interfacial modification of dielectrics is a simple and effective approach for the OTFT performance improvement.

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Acknowledgments

This work was supported by the National Natural Science Fountain of China (No. 61106086), promotive research fund for excellent young and middle-aged scientists of Shandong Province (No. BS2011DX014), and opening foundation of State Key Laboratory of New Ceramic and Fine Processing in Tsinghua University (No. KF201311).

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Authors and Affiliations

  1. Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan, 250061, China

    Xurong Zhao, Qian Zhang, Sumei Wang & Jun Ouyang

  2. Department of Material and Engineering, Qilu University of Technology, Jinan, 250353, China

    Guodong Xia

  3. State Key Laboratory of New Ceramic and Fine Processing, Tsinghua University, Beijing, 100084, China

    Ji Zhou

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  1. Xurong Zhao
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  2. Qian Zhang
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  3. Guodong Xia
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  4. Sumei Wang
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  5. Jun Ouyang
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  6. Ji Zhou
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Correspondence to Guodong Xia or Sumei Wang.

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Zhao, X., Zhang, Q., Xia, G. et al. Enhanced performances of organic thin film transistors by dual interfacial modification of dielectric layer. Appl. Phys. A 118, 809–815 (2015). https://doi.org/10.1007/s00339-014-8802-8

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  • DOI: https://doi.org/10.1007/s00339-014-8802-8

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