Applied Physics A

, Volume 118, Issue 1, pp 361–366 | Cite as

Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation

Article

Abstract

The present work reports the fabrication and detailed electrical properties of graphene/p-type polycrystalline silicon (poly-Si) Schottky diodes with and without ultraviolet irradiation. Ultraviolet treatment may lead to the reduced work function of graphene, thus increasing the Schottky barrier height at the graphene/poly-Si interface. Compared to the graphene/poly-Si Schottky diodes without ultraviolet treatment, the ultraviolet-treated graphene/poly-Si Schottky diodes exhibit lower ideality factor and higher responsivity. The sensitivity of the work function of graphene to the ultraviolet irradiation time provides an opportunity to tune the electrical parameters of graphene/poly-Si Schottky diodes. The ability to controllably tune the work function of graphene is essential for optimizing the efficiency of optoelectronic and electronic devices.

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Copyright information

© Springer-Verlag Berlin Heidelberg 2014

Authors and Affiliations

  • Jian-Huang Lin
    • 1
  • Yow-Jon Lin
    • 1
  • Hsing-Cheng Chang
    • 2
  1. 1.Institute of PhotonicsNational Changhua University of EducationChanghuaTaiwan
  2. 2.Department of Automatic Control EngineeringFeng Chia UniversityTaichungTaiwan

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