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Valence-band offset of n-Zn0.8Mg0.2O/p-Ni0.8Mg0.2O heterojunction with tunable bandgaps of both sides measured by X-ray photoelectron spectroscopy

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Abstract

The valence-band offset (VBO) of n-Zn0.8Mg0.2O/p-Ni0.8Mg0.2O heterojunction grown by pulsed laser deposition was investigated by X-ray photoelectron spectroscopy. Core levels of Zn 2p and Ni 2p were used to align the VBO of n-Zn0.8Mg0.2O/p-Ni0.8Mg0.2O heterojunction. It was found that n-Zn0.8Mg0.2O/p-Ni0.8Mg0.2O heterojunction has a type-II band alignment and its VBO is determined to be 1.88 ± 0.05 eV, and conduction-band offset is deduced to be −1.91 ± 0.05 eV. Alloying with Mg can tune the positions of valence-band maximum (VBM), conduction-band minimum (CBM) and bandgaps of both Zn1−x Mg x O and Ni1−x Mg x O thin films, according to which we can design various heterojunction devices with desired CBM and VBM values of both sides by tuning appropriate Mg composition. Also, there is blue shift of absorption edges of the integral Zn0.8Mg0.2O/Ni0.8Mg0.2O heterojunction, which has a significant impact on the design and application of deep-ultraviolet optoelectronic devices, such as solar-blind UV detectors with high photoresponse performance.

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Acknowledgments

This work was supported by National Natural Science Foundation of China 51372224, Program for Innovative Research Team in University of Ministry of Education of China (IRT13037), and National Science and Technology Support Program (2012BAC08B08).

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    Yan-Min Guo, Li-Ping Zhu, Wen-Zhe Niu, Xiang-Yu Zhang & Zhi-Zhen Ye

  2. Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    Li-Ping Zhu

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  1. Yan-Min Guo
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Correspondence to Li-Ping Zhu.

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Guo, YM., Zhu, LP., Niu, WZ. et al. Valence-band offset of n-Zn0.8Mg0.2O/p-Ni0.8Mg0.2O heterojunction with tunable bandgaps of both sides measured by X-ray photoelectron spectroscopy. Appl. Phys. A 118, 239–242 (2015). https://doi.org/10.1007/s00339-014-8666-y

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