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Growth and interfacial properties of atomic layer deposited Al0.7Ti0.3O y high-k dielectric on Ge substrate

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Abstract

Growth and interfacial properties of atomic layer deposited Al0.7Ti0.3O y on Ge have been investigated as a potential high-k gate dielectric for future Ge-based metal oxide semiconductor devices. A sandwich structure of Al2O3/TiO2 stack is proposed for Al2O3/TiO2 intermixing and high-k/Ge interfacial passivation. The film thicknesses and interface microstructure are characterized by spectroscopy ellipsometry and high-resolution transmission electron microscopy. X-ray photoelectron spectrometry is used to analyze the chemical composition and bonding states, and to reveal the band alignment of high-k/Ge heterojunctions. Metal-oxide-capacitors are formed by depositing aluminum electrodes to perform capacitance–voltage measurements for electrical characteristics. All evidences show a positive prospect of employing atomic layer deposited Al0.7Ti0.3O y as high-k gate dielectric for future Ge-based devices.

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Acknowledgments

This work is supported by the National Natural Science Foundation of China (No. 51102048, 61376008), the SRFDP (No. 20110071120017), and Innovation Program of Shanghai Municipal Education Commission (14ZZ004). Thanks to the assistance from School of Electronic Science and Engineering of Nangjing University and Shanghai Institute of Ceramics, Chinese Academy of Sciences.

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Authors and Affiliations

  1. State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai, 200433, China

    Hong-Liang Lu, Zhang-Yi Xie, Yang Geng, Yuan Zhang, Qing-Qing Sun, Peng-Fei Wang, Shi-Jin Ding & David Wei Zhang

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  1. Hong-Liang Lu
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Lu, HL., Xie, ZY., Geng, Y. et al. Growth and interfacial properties of atomic layer deposited Al0.7Ti0.3O y high-k dielectric on Ge substrate. Appl. Phys. A 117, 1479–1484 (2014). https://doi.org/10.1007/s00339-014-8579-9

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  • DOI: https://doi.org/10.1007/s00339-014-8579-9

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