Abstract
A novel white light-emitting diode based on a large Stokes shift (~200 nm) and using pure green light-emitting CdSeS quantum dots (QDs) with an Ag/ZnSnO/QDs/spiro-TPD/ITO structure has been fabricated in which ZnSnO and spiro-TPD are served as the electron and hole transport layer, respectively. The large Stokes shift of the CdSeS QDs excludes potentially Förster resonance energy transfer process, which allows spiro-TPD to act as both an emitter and hole transport layer. The devices exhibit a wide EL spectrum consisting of three components: blue emission from spiro-TPD, green emission from QD band–band recombination, and red emission from QD surface-state recombination. We further found that as the intensity ratios among these three components vary with bias the color of the QD light-emitting diodes is tunable. The device displays a good white light-emitting characteristic with CIE coordinates of (0.281, 0.384) at an appropriate bias.
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This work was sponsored by National Key Basic Research Program of China (No. 2011CB925603) and Natural Science Foundation of China (Nos. 61290305 and 11374259).
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Liu, B., Li, R., Hu, L. et al. White light-emitting quantum dot diodes and tuning of luminescence processes. Appl. Phys. A 116, 941–945 (2014). https://doi.org/10.1007/s00339-014-8465-5
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DOI: https://doi.org/10.1007/s00339-014-8465-5