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Generation and recombination in two-dimensional bipolar transistors

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Abstract

We study the effects of recombination and generation process on the operation of bipolar junction transistor based on two-dimensional materials, and in particular, graphone. Here, we use Shockley–Read–Hall model to study these process. First, we investigate the current–voltage characteristics of a graphone p–n junction considering generation and recombination process. Then, we calculate the estimated changes in current gain, cutoff frequency, and output characteristics of a graphone bipolar junction transistor designed in a recent study.

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Authors and Affiliations

  1. School of Electrical Engineering, Sharif University of Technology, P. O. Box 11365-9363, Tehran, Iran

    Behnaz Gharekhanlou & Sina Khorasani

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  1. Behnaz Gharekhanlou
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  2. Sina Khorasani
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Correspondence to Sina Khorasani.

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Gharekhanlou, B., Khorasani, S. Generation and recombination in two-dimensional bipolar transistors. Appl. Phys. A 115, 737–740 (2014). https://doi.org/10.1007/s00339-014-8402-7

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  • DOI: https://doi.org/10.1007/s00339-014-8402-7

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