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Performance enhancement of blue light-emitting diodes by adjusting the p-type doped last barrier

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Abstract

Blue light-emitting diodes (LEDs) with different p-doping concentrations in the last barrier have been studied numerically. The energy band diagrams, carrier concentrations, internal quantum efficiency and light output power are investigated using APSYS software. The simulation results show that the LED structure with p-doping in the last barrier has a better hole-injection efficiency and confinement of electron leakage over the structure with the last undoped GaN barrier due to enhancement of the holes’ injection and the electrons’ confinement. As a result, the efficiency droop is markedly improved, and the light output power is greatly enhanced when a larger p-doping amount is centralised in the last barrier.

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Acknowledgments

This work was supported by the National High Technology Program of China (2011AA03A105 and 2013AA03A101), the National Natural Science Foundation of China (61306051 and 61306050), the Beijing Municipal Science and Technology Project (D12110300140000), and the National Basic Research Program of China (2011CB301902).

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Authors and Affiliations

  1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, 510631, People’s Republic of China

    Yan Lei & Miao He

  2. Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China

    Yan Lei, Zhiqiang Liu, Zhi Li, Junjie Kang, Xiaoyan Yi, Junxi Wang & Jinmin Li

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  1. Yan Lei
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  2. Zhiqiang Liu
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  3. Miao He
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  4. Zhi Li
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  6. Xiaoyan Yi
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Correspondence to Zhiqiang Liu or Miao He.

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Lei, Y., Liu, Z., He, M. et al. Performance enhancement of blue light-emitting diodes by adjusting the p-type doped last barrier. Appl. Phys. A 115, 1115–1119 (2014). https://doi.org/10.1007/s00339-014-8393-4

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  • DOI: https://doi.org/10.1007/s00339-014-8393-4

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