Abstract
Silicon (Si) wettability is one of the important parameters in the development of Si-based biosensing and lab-on-chip devices. We report on UV laser induced hydrophobicity of Si (001) wafers immersed in methanol during the irradiation with an ArF excimer laser. The irradiation with 800 pulses of the laser operating at 65 mJ/cm2 allowed to significantly increase the hydrophobicity of investigated samples as characterized by the static contact angle change from 77° to 103°. Owing to the irradiation with relatively low laser fluence, no measurable change in surface morphology of the irradiated samples has been observed with atomic force microscopy measurements. The nature of the hydrophobic surface of investigated samples is consistent with X-ray photoelectron spectroscopy analysis that indicates formation of Si–O–CH3 bonds on the surface of the laser-irradiated material.
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Acknowledgments
This work was supported by the Natural Science and Engineering Research Council of Canada (Discovery Grant No. 122795-2010) and the programs of the Canada Research Chair in Quantum Semiconductors, Plasma Québec and Regroupement québécois sur les matériaux de pointe (RQMP). Technical assistance of the Université de Sherbrooke Centre de characterization de materiaux (CCM) in collecting XPS data and Centre de recherche en nanofabrication et en nanocaracterisation (CRN2) as well as the support from NanoQuébec are greatly appreciated. NL acknowledges the Merit Scholarship Program for Foreign Student, Fonds de recherche du Québec-Nature et technologies (FRQNT), for providing a graduate student scholarship.
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Liu, N., Hassen, W.M. & Dubowski, J.J. Excimer laser-assisted chemical process for formation of hydrophobic surface of Si (001). Appl. Phys. A 117, 37–41 (2014). https://doi.org/10.1007/s00339-014-8380-9
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DOI: https://doi.org/10.1007/s00339-014-8380-9