Skip to main content
SpringerLink
Log in

Removal of oxygen from silicon by electron beam melting

  • Rapid communications
  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Small amounts of multicrystalline silicon were melted in an electron beam furnace in different experimental conditions in order to investigate the oxygen evaporation behavior during the electron beam melting (EBM) process. The oxygen content level before and after EBM was determined by secondary ion mass spectroscopy. The oxygen content was reduced from 6.177 to 1.629 ppmw when silicon was melted completely at 15 kW with removal efficiency up to 73.6 %. After that, it decreased continually to <0.0517 ppmw when the refining time exceeded 600 s with a removal efficiency of more than 99.08 %. During the melting process, the evaporation rate of silicon is 1.10 × 10−5 kg/s. The loss of silicon could be reduced up to 1.7 % during oxygen removal process to a desirable figure, indicating EBM is an effective method to remove oxygen from silicon and decrease the loss of silicon.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

References

  1. K.J. Weber, A.W. Blakers, M.J. Stocks, J.H. Babaei, V.A. Everett, A.J. Neuendorf, P.J. Verlinden, IEEE Electron. Device Lett. 25, 37 (2004)

    Article  ADS  Google Scholar 

  2. A.F.B. Braga, S.P. Moreira, P.R. Zampieri, J.M.G. Bacchin, P.R. Mei, Sol. Energy Mater. Sol. Cells 92, 418 (2008)

    Article  Google Scholar 

  3. T.H. Tsai, Sep. Purif. Technol. 78, 16 (2011)

    Article  Google Scholar 

  4. P. Woditsch, W. Koch, Sol. Energy Mater. Sol. Cells 72, 11 (2002)

    Article  Google Scholar 

  5. H. Matsuo, R.B. Ganesh, S. Nakano, L.J. Liu, K. Arafune, Y. Ohshita, M. Yamaguchi, K. Kakimoto, J. Cryst. Growth 310, 2204 (2008)

    Article  ADS  Google Scholar 

  6. K. Morita, T. Miki, Intermetallics. 11, 1111 (2003)

    Article  Google Scholar 

  7. L. Hu, Z. Wang, X.Z. Gong, Z.C. Guo, H. Zhang, Sep. Purif. Technol. 118, 699 (2013)

    Article  Google Scholar 

  8. T. Luo, G.Q. Lv, W.H. Ma, K.X. Wei, X. Yang, S.Y. Li, J. Cryst. Growth 384, 122 (2013)

    Article  ADS  Google Scholar 

  9. S.S. Zheng, T.A. Engh, M. Tangstad, X.T. Lou, Metall. Mater. Trans. A 42A, 2214 (2011)

    Article  ADS  Google Scholar 

  10. N. Yuge, M. Abe, K. Hanazawa, H. Baba, N. Nakamura, Y. Kato, Y. Sakaguchi, F. Aratani, Prog. Photovoltaics. 9, 203 (2001)

    Article  Google Scholar 

  11. Y. Yatsurugi, N. Akiyama, Y. Endo, T. Nozaki, J. Electrochem. Soc. 120, 975 (1973)

    Article  Google Scholar 

  12. K. Sakamoto, K. Yoshikawa, T. Kusamichi, T. Onoye, ISIJ Int. 32, 616 (1992)

    Article  Google Scholar 

  13. T. Ikeda, M. Maeda, ISIJ Int. 32, 635 (1992)

    Article  Google Scholar 

  14. T. Kusamichi, H. Kanayama, T. Onoye, ISIJ Int. 32, 593 (1992)

    Article  Google Scholar 

  15. S. Watakabe, K. Suzuki, K. Nishikawa, ISIJ Int. 32, 625 (1992)

    Article  Google Scholar 

  16. B. Gao, S. Nakano, K. Kakimoto, Int. J. Photoenergy. 908786 (2013)

  17. T. Carlberg, J. Electrochem. Soc. 133, 1940 (1986)

    Article  Google Scholar 

  18. X. Peng, W. Dong, Y. Tan, D.C. Jiang, Vac. 86, 471 (2011)

    Article  Google Scholar 

Download references

Acknowledgments

The author gratefully acknowledges financial support from National Key Technology R & D Program (Grant No. 2011BAE03B01) and the Natural Science Foundation of China (Grant No. U1137601).

Author information

Authors and Affiliations

  1. School of Materials Science and Engineering, Dalian University of Technology, No. 2 Linggong Road, Ganjingzi District, Dalian, 116023, China

    H. M. Noor ul Huda Khan Asghar, Yi Tan, Shuang Shi, Dachuan Jiang, Shiqiang Qin, Jiao Liao, Shutao Wen & Wei Dong

  2. Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian, 116023, China

    H. M. Noor ul Huda Khan Asghar, Yi Tan, Shuang Shi, Dachuan Jiang, Shiqiang Qin, Jiao Liao, Shutao Wen & Wei Dong

  3. R&D Department, Qingdao Longsun Silicon Technology Ltd., Qingdao, 266000, China

    Yao Liu

  4. Department of Physics, Balochistan University of Information Technology Engineering and Management Sciences, Quetta, 87300, Pakistan

    H. M. Noor ul Huda Khan Asghar

Authors
  1. H. M. Noor ul Huda Khan Asghar
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Yi Tan
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Shuang Shi
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Dachuan Jiang
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Shiqiang Qin
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Jiao Liao
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Shutao Wen
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Wei Dong
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. Yao Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Yi Tan.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Noor ul Huda Khan Asghar, H.M., Tan, Y., Shi, S. et al. Removal of oxygen from silicon by electron beam melting. Appl. Phys. A 115, 753–757 (2014). https://doi.org/10.1007/s00339-014-8367-6

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-014-8367-6

Keywords

Search

Navigation