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Pulsed laser deposition of rare-earth-doped gallium lanthanum sulphide chalcogenide glass thin films

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Abstract

Amorphous chalcogenide thin films are of high current interest for technological applications as optical storage media or waveguides for photonic integrated circuits. As part of a larger project including fs, ps and ns pulsed laser deposition regimes, Er- and Pr-doped GLS thin films were deposited by ns PLD, and their structural, chemical and optical properties were analyzed by optical and electronic microscopy, stylus profilometry, X-ray diffraction, Raman spectroscopy, time-of-flight secondary ion mass spectrometry (TOF–SIMS), energy-dispersive X-ray spectroscopy, variable-angle spectroscopic ellipsometry and optical transmission. Films deposited at moderate fluence (~4 J/cm2) in UV (266 nm) presented a good surface quality, while exhibiting acceptable composition uniformity and deviations from stoichiometry in line with the literature. Composition and optical properties dependences on the deposition conditions were investigated and discussed with respect to previous studies on similar systems.

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Acknowledgments

This work was supported by the PHC projects Brancusi n° 29551XB and Barrande n° 28449NK, Czech Science Foundation (Project No. 13-05082S) and Ministry of Education, Youth, and Sports of the Czech Republic (Project CZ.1.07/2.3.00/ 30.0058 “Development of Research Teams at the University of Par- dubice”). The financial support from the Grant POSDRU/89/1.5/S/63663 is highly acknowledged. The authors thank B. Chazallon and K. Ortega for assistance with Raman data recording and analysis, and N. Nuns and B. Capoen for support with the ToF–SIMS and optical transmission measurements, respectively.

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Authors and Affiliations

  1. Laboratoire de Physique des Lasers, Atomes et Molécules (UMR CNRS 8523), Université Lille 1 Sciences Technologies, Villeneuve d’Ascq, 59655, France

    O. G. Pompilian & C. Focsa

  2. Faculty of Physics, University “Al. I. Cuza”, 700506, Iasi, Romania

    G. Dascalu, I. Mihaila & S. Gurlui

  3. Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210, Pardubice, Czech Republic

    M. Olivier & P. Nemec

  4. Institut des Sciences Chimiques de Rennes (UMR CNRS 6226), Université de Rennes 1, Rennes, 35042, France

    V. Nazabal

  5. Faculty of Materials Science and Engineering, “Gheorghe Asachi” Technical University of Iasi, Iasi, Romania

    N. Cimpoesu

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  1. O. G. Pompilian
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  2. G. Dascalu
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  3. I. Mihaila
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  4. S. Gurlui
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  5. M. Olivier
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  6. P. Nemec
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  7. V. Nazabal
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  8. N. Cimpoesu
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  9. C. Focsa
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Corresponding author

Correspondence to C. Focsa.

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Pompilian, O.G., Dascalu, G., Mihaila, I. et al. Pulsed laser deposition of rare-earth-doped gallium lanthanum sulphide chalcogenide glass thin films. Appl. Phys. A 117, 197–205 (2014). https://doi.org/10.1007/s00339-014-8359-6

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  • DOI: https://doi.org/10.1007/s00339-014-8359-6

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