Abstract
We report on the growth of highly c-axis-oriented ZnO nanostructures by pulsed laser deposition technique without using any catalyst. The full-width-at-half-maximum of (002) peak decreased with an increase in substrate temperature. However, a dip at 150 °C is attributed to the contribution from both the small- and large-size particles. FE-SEM images show that the increase in substrate temperature results in the formation of larger particles. Photoluminescence emission is observed both from near band edge as well as defect-related states for all the nanostructures. The presence of E 2(low) and E 2(high) Raman mode intensity and respective increase in the intensity with substrate temperature indicates better crystallinity. Both PL and Raman spectra indicate that A 1(LO) mode may arise due to the defect related to interstitial zinc.
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Acknowledgments
Poulami Ghosh thanks Council of Scientific and Industrial Research (CSIR), New Delhi, for the financial assistance. Central Instruments Facility (CIF), IIT Guwahati, is acknowledged for the FE-SEM and Raman measurements.
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Ghosh, P., Sharma, A.K. Effect of substrate temperature on the growth of pulsed-laser deposited ZnO nanostructures. Appl. Phys. A 116, 1877–1884 (2014). https://doi.org/10.1007/s00339-014-8347-x
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DOI: https://doi.org/10.1007/s00339-014-8347-x