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Microelectrode patterning of metal films using pulsed UV-laser system

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Abstract

This study presents a maskless method to conduct microelectrode patterning of metal films using pulsed UV-laser-writing technology. The experimental procedures involved designing the ablation region of a glass substrate, ablation path planning, and determining detailed laser-writing parameters. The various parameters used in a UV-laser-writing system were investigated and analyzed using an optical microscope and a three-dimensional confocal laser scanning microscope. This technique was successfully applied in patterning aluminum (Al) thin film on a glass substrate for use in microheater devices. The measurements of electrical resistance and temperature distribution on the substrate demonstrated that no short circuiting occurred in the microheater, confirming the quality of the electrical isolation values.

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Acknowledgments

The authors thank the National Science Council of Taiwan for financially supporting this research under contract nos. NSC 102-2622-E-492-007-CC3 and NSC 102-2221-E-492-012, and measuring supports from vacuum technology and nanofabrication division and precision optics and machining division of Instrument Technology Research Center, Taiwan are also acknowledged.

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Authors and Affiliations

  1. Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu, 30076, Taiwan

    Chih-Chung Yang, Wen-Tse Hsiao, Chien-Kai Chung, Hsin-Yi Tsai, Jer-Liang Andrew Yeh & Kuo-Cheng Huang

  2. Institute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu, 30013, Taiwan

    Jer-Liang Andrew Yeh

  3. Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan

    Jer-Liang Andrew Yeh

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  1. Chih-Chung Yang
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  2. Wen-Tse Hsiao
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  3. Chien-Kai Chung
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  4. Hsin-Yi Tsai
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  5. Jer-Liang Andrew Yeh
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  6. Kuo-Cheng Huang
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Correspondence to Kuo-Cheng Huang.

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Yang, CC., Hsiao, WT., Chung, CK. et al. Microelectrode patterning of metal films using pulsed UV-laser system. Appl. Phys. A 117, 161–168 (2014). https://doi.org/10.1007/s00339-014-8315-5

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  • DOI: https://doi.org/10.1007/s00339-014-8315-5

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