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Colossal resistance switching in Pt/BiFeO3/Nb:SrTiO3 memristor

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Abstract

We report reversible resistance switching behaviors in Pt/BiFeO3/Nb:SrTiO3 memristor. The resistance of the junctions can be tuned up to about five orders of magnitude by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The high performances are promising for employing ferroelectric junctions in nonvolatile memory and logic devices. The nonvolatile resistance switching behaviors could be attributed to the formation and annihilation of trap centers in the BFO films, resulting in Poole–Frenkel emission for low resistance state and the thermionic emission for high resistance state, respectively.

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Acknowledgments

The authors acknowledge the support from the Scientific Research Foundation for Returned Scholars of Ministry of Education of China, Specialized Research Fund for the Doctoral Program of Higher Education of China (Grants Nos. 20120171120011 and 20130171110018), National Natural Science Foundation of China (Grants Nos. 61273310 and 11304399), Natural Science Foundation of Guangdong Province (Grants No. S2011020001190).

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Authors and Affiliations

  1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, 510275, China

    Shuxiang Wu, Lizhu Ren, Fengmei Yu, Kungan Yang, Mei Yang, Yunjia Wang, Meng Meng, Wenqi Zhou & Shuwei Li

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  1. Shuxiang Wu
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Correspondence to Shuxiang Wu.

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Wu, S., Ren, L., Yu, F. et al. Colossal resistance switching in Pt/BiFeO3/Nb:SrTiO3 memristor. Appl. Phys. A 116, 1741–1745 (2014). https://doi.org/10.1007/s00339-014-8314-6

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