Abstract
Hyperdoping with deep-level impurity is a promising method to prepare intermediate band semiconductors. We prepared silicon hyperdoped with deep-level impurities, sulfur and titanium, by ion implantation followed by pulsed YAG laser melting. The processes of sulfur and titanium hyperdoping are comparatively studied. The amorphous sulfur and titanium ion-implanted layers changed to monocrystal by following pulsed laser melting. The depth profile of sulfur impurity after pulsed laser melting is similar to that of ion-implanted sample, while large segregation is observed for titanium hyperdoping. The crystallinity and degree of segregation depend on the laser shot number and initially implanted titanium dose. There is a trade-off between crystallinity and depth profile of impurity for titanium hyperdoping. From a viewpoint material processing, formation of high-quality silicon monocrystal hyperdoped with sulfur is easier than that with titanium. Correlation between the mid-infrared optical absorption and photoconductivity is also discussed for sulfur-hyperdoped sample.
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References
A. Luque, A. Martí, Phys. Rev. Lett. 78, 5014 (1997)
K. Sánchez, I. Aguilera, P. Palacios, P. Wahnón, Phys. Rev. B 82, 165201 (2010)
E. Ertekin, M. Winkler, D. Recht, A. Said, M. Aziz, T. Buonassisi, J. Grossman, Phys. Rev. Lett. 108, 026401 (2012)
K. Sánchez, I. Aguilera, P. Palacios, P. Wahnón, Phys. Rev. B 79, 165203 (2009)
M.T. Winkler, D. Recht, M.-J. Sher, A.J. Said, E. Mazur, M.J. Aziz, Phys. Rev. Lett. 106, 178701 (2011)
J.T. Sullivan, R.G. Wilks, M.T. Winkler, L. Weinhardt, D. Recht, A.J. Said, B.K. Newman, Y. Zhang, M. Blum, S. Krause, W.L. Yang, C. Heske, M.J. Aziz, M. Bär, T. Buonassisi, Appl. Phys. Lett. 99, 142102 (2011)
I. Umezu, J.M. Warrender, S. Charnvanichborikarn, A. Kohno, J.S. Williams, M. Tabbal, D.G. Papazoglou, X.-C. Zhang, M.J. Aziz, J. Appl. Phys. 113, 213501 (2013)
J. Olea, M. Toledano-Luque, D. Pastor, G. González-Díaz, I. Mártil, J. Appl. Phys. 104, 016105 (2008)
J. Olea, G. González-Díaz, D. Pastor, I. Mártil, A. Marti, E. Antolin, A. Luque, J. Appl. Phys. 109, 063718 (2011)
T. Kim, J. Warrender, M. Aziz, Appl. Phys. Lett. 88, 241902 (2006)
B.P. Bob, A. Kohno, S. Charnvanichborikarn, J.M. Warrender, I. Umezu, M. Tabbal, J.S. Williams, M.J. Aziz, J. Appl. Phys. 107, 123506 (2010)
E. Antolín, A. Martí, J. Olea, D. Pastor, G. González-Díaz, I. Mártil, A. Luque, Appl. Phys. Lett. 94, 042115 (2009)
A.J. Said, D. Recht, J.T. Sullivan, J.M. Warrender, T. Buonassisi, P.D. Persans, M.J. Aziz, Appl. Phys. Lett. 99, 073503 (2011)
J.T. Sullivan, C.B. Simmons, J.J. Krich, A.J. Akey, D. Recht, M.J. Aziz, T. Buonassisi, J. Appl. Phys. 114, 103701 (2013)
C.W. White, B.R. Appleton, S.R. Wilson, Laser Annealing of Semiconductors (Academic press, New York, 1982)
D. Recht, M.J. Smith, S. Charnvanichborikarn, J.T. Sullivan, M.T. Winkler, J. Mathews, J.M. Warrender, T. Buonassisi, J.S. Williams, S. Gradečak, M.J. Aziz, J. Appl. Phys. 114, 124903 (2013)
J. Olea, A. Del Prado, D. Pastor, I. Mártil, G. González-Díaz, J. Appl. Phys. 109, 113541 (2011)
W. Spitzer, Fan, Phys. Rev. 108, 268 (1957)
P. Schmid, Phys. Rev. B 23, 5531 (1981)
Acknowledgments
The authors gratefully acknowledge helpful conversations with M. Aziz and J. Warrender. This research was partially supported in part by a Grant-in-Aid for Scientific Research from the Japan Society for the Promotion of Science.
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Umezu, I., Naito, M., Kawabe, D. et al. Hyperdoping of silicon with deep-level impurities by pulsed YAG laser melting. Appl. Phys. A 117, 155–159 (2014). https://doi.org/10.1007/s00339-014-8313-7
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DOI: https://doi.org/10.1007/s00339-014-8313-7