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Influence of seed layer orientation on the growth and physical properties of SnS nanostructures

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Abstract

Stoichiometric tin (II) sulfide (SnS) nanostructures were synthesized on SnS(010)/glass substrates using a simple and low-temperature chemical solution method, and their physical properties were investigated. The as-synthesized SnS nanostructures exhibited orthorhombic crystal structure and most of the nanocrystals are preferentially oriented along the <010> direction. These nanostructures showed p-type electrical conductivity and high electrical resistivity of 93 Ωcm. SnS nanostructures exhibited a direct optical band gap of 1.43 eV. While increasing the surrounding temperature from 20 to 150 °C, the electrical resistivity of the structures decreased and exhibited the activation energy of 0.28 eV.

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Acknowledgments

N. K. Reddy wishes to acknowledge the CSIR for the sanction of Senior Research Associateship under the scheme of Scientist’s pool (No. 13(8525-A) 2011-Pool). M. Devika wishes to acknowledge UGC for the sanction of Dr. D.S. Kothari Postdoctoral fellowship (No. F.4-2/2006(BSR)/13-703/2012(BSR)).

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  1. N. Koteeswara Reddy

    Present address: Institute of Chemistry, Humboldt University, Brook-Taylor-Str.2, 12489, Berlin, Germany

Authors and Affiliations

  1. Center for Nanoscience and Engineering, Indian Institute of Science, Bangalore, 560012, India

    N. Koteeswara Reddy

  2. Department of Aerospace Engineering, Indian Institute of Science, Bangalore, 560012, India

    M. Devika

  3. Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore, 560012, India

    K. R. Gunasekhar

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  1. N. Koteeswara Reddy
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  2. M. Devika
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  3. K. R. Gunasekhar
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Correspondence to N. Koteeswara Reddy.

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Reddy, N.K., Devika, M. & Gunasekhar, K.R. Influence of seed layer orientation on the growth and physical properties of SnS nanostructures. Appl. Phys. A 116, 1193–1197 (2014). https://doi.org/10.1007/s00339-013-8204-3

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  • DOI: https://doi.org/10.1007/s00339-013-8204-3

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