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Suspended HfO\(_{2}\) photonic crystal slab on III-nitride/Si platform

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Abstract

We present here the fabrication of suspended hafnium oxide (HfO\(_{2})\) photonic crystal slab on a III-nitride/Si platform. The calculations are performed to model the suspended HfO\(_{2 }\) photonic crystal slab. Aluminum nitride (AlN) film is employed as the sacrificial layer to form air gap. Photonic crystal patterns are defined by electron beam lithography and transferred into HfO\(_{2 }\) film, and suspended HfO\(_{2 }\) photonic crystal slab is achieved on a III-nitride/Si platform through wet-etching of AlN layer in the alkaline solution. The method is promising for the fabrication of suspended HfO\(_{2 }\) nanostructures incorporating into a III-nitride/Si platform, or acting as the template for epitaxial growth of III-nitride materials.

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Acknowledgments

This work is jointly supported by NSFC (11104147, 61322112) and research project (NY211001, BJ211026). The authors thank the Micro/Nano Center in Tohoku University for the device fabrication.

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Authors and Affiliations

  1. Grüenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, 210003, Jiang-Su, People’s Republic of China

    Yongjin Wang, Jiao Feng, Ziping Cao & Hongbo Zhu

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  1. Yongjin Wang
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  2. Jiao Feng
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  3. Ziping Cao
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  4. Hongbo Zhu
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Correspondence to Yongjin Wang.

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Wang, Y., Feng, J., Cao, Z. et al. Suspended HfO\(_{2}\) photonic crystal slab on III-nitride/Si platform. Appl. Phys. A 115, 1409–1413 (2014). https://doi.org/10.1007/s00339-013-8052-1

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  • DOI: https://doi.org/10.1007/s00339-013-8052-1

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