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Improved quantitative analysis of Cu(In,Ga)Se2 thin films using MCs+-SIMS depth profiling

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Abstract

The chalcopyrite semiconductor, Cu(InGa)Se2 (CIGS), is popular as an absorber material for incorporation in high-efficiency photovoltaic devices because it has an appropriate band gap and a high absorption coefficient. To improve the efficiency of solar cells, many research groups have studied the quantitative characterization of the CIGS absorber layers. In this study, a compositional analysis of a CIGS thin film was performed by depth profiling in secondary ion mass spectrometry (SIMS) with MCs+ (where M denotes an element from the CIGS sample) cluster ion detection, and the relative sensitivity factor of the cluster ion was calculated. The emission of MCs+ ions from CIGS absorber elements, such as Cu, In, Ga, and Se, under Cs+ ion bombardment was investigated using time-of-flight SIMS (TOF-SIMS) and magnetic sector SIMS. The detection of MCs+ ions suppressed the matrix effects of varying concentrations of constituent elements of the CIGS thin films. The atomic concentrations of the CIGS absorber layers from the MCs+-SIMS exhibited more accurate quantification compared to those of elemental SIMS and agreed with those of inductively coupled plasma atomic emission spectrometry. Both TOF-SIMS and magnetic sector SIMS depth profiles showed a similar MCs+ distribution for the CIGS thin films.

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Acknowledgements

This work was supported by the Korea Institute of Science & Technology (KIST) Institutional Program.

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Authors and Affiliations

  1. Advanced Analysis Center, Korea Institute of Science & Technology, Seoul, 136-791, Korea

    Jihye Lee, Seon Hee Kim, Kang-Bong Lee & Yeonhee Lee

  2. Clean Energy Research Center, Korea Institute of Science & Technology, Seoul, 136-791, Korea

    Byoung Koun Min

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  1. Jihye Lee
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  2. Seon Hee Kim
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  3. Kang-Bong Lee
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  5. Yeonhee Lee
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Correspondence to Yeonhee Lee.

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Lee, J., Kim, S.H., Lee, KB. et al. Improved quantitative analysis of Cu(In,Ga)Se2 thin films using MCs+-SIMS depth profiling. Appl. Phys. A 115, 1355–1364 (2014). https://doi.org/10.1007/s00339-013-8009-4

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