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Top electrode-dependent resistance switching behaviors of lanthanum-doped ZnO film memory devices

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Abstract

Lanthanum-doped ZnO (Zn0.99La0.01O) polycrystalline thin films were deposited on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. Metal/La-doped ZnO/Pt sandwich structures were constructed by depositing different top electrodes (Ag and Pt). Unipolar switching and bipolar switching characteristics were investigated in Pt/La-doped ZnO/Pt and Ag/La-doped ZnO/Pt structures, respectively. Compared with the undoped devices (Pt/ZnO/Pt and Ag/ZnO/Pt), the La-doped devices exhibits superior resistive switching performances, such as narrow distribution of the resistive switching properties (R ON, R OFF, V Set, and V Reset), higher R OFF/R ON ratio and sharp switching transition.

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Acknowledgement

This work was financially supported by the Key Project of the National Natural Science Foundation of China (NSFC) (Grant No. 11032010), NSFC (Grant Nos. 51072171, 61274107, 61176093, and 11275163), PCSIRT (Grant No. IRT1080), the 973 Program (Grant No. 2012CB326404), the Key Project of Hunan Provincial NSFC (Grant No. 13JJ2023), the Key Project of the Scientific Research Fund of the Hunan Provincial Education Department (Grant No. 12A129), the Doctoral Program of Higher Education of China (Grant No. 20104301110001), and the Aid Program for Science and Technology Innovative Research Teams in Higher Educational Institutions of Hunan Province.

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Authors and Affiliations

  1. Key Laboratory for Low Dimensional Materials and Application Technology of Ministry of Education, Xiangtan University, Xiangtan, Hunan, 411105, China

    Dinglin Xu, Minghua Tang & Baiwen Zeng

  2. The School of Mathematics and Computational Science, Xiangtan University, Xiangtan, Hunan, 411105, China

    Ying Xiong

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  1. Dinglin Xu
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  2. Ying Xiong
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  3. Minghua Tang
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  4. Baiwen Zeng
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Correspondence to Minghua Tang.

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Xu, D., Xiong, Y., Tang, M. et al. Top electrode-dependent resistance switching behaviors of lanthanum-doped ZnO film memory devices. Appl. Phys. A 114, 1377–1381 (2014). https://doi.org/10.1007/s00339-013-7994-7

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  • DOI: https://doi.org/10.1007/s00339-013-7994-7

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