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Optical, photo-acoustic and electrical switching studies of amorphous GeS2 thin films

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Abstract

This paper reports optical, photo-acoustic and electrical switching investigations of GeS2 amorphous thin films of different thicknesses, deposited on glass substrates in vacuum. The Tauc parameter (B 1/2) and Urbach energy (E U) have been determined from the transmittance spectra, to understand the changes in structural disorder; it is found that B 1/2 increases whereas E U decreases as the thickness of the films increases. Based on the results, it is suggested that bond re-arrangement, i.e. transformation from homopolar bonds to heteropolar bonds, takes place with increase in thickness. The thermal diffusivity values of GeS2 thin films also show the presence of a chemically ordered network in the GeS2 thin films. Further, it is found that these films exhibit memory-type electrical switching. The observed variation in the switching voltages has been understood on the basis of increase in chemical order.

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Acknowledgements

The authors gratefully acknowledge the University Grants Commission (UGC), New Delhi, Government of India, for financial support under the UGC project no. 37-270/2009(SR).

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Correspondence to D. Pathinettam Padiyan.

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Ananth Kumar, R.T., Das, C., Asokan, S. et al. Optical, photo-acoustic and electrical switching studies of amorphous GeS2 thin films. Appl. Phys. A 115, 1151–1158 (2014). https://doi.org/10.1007/s00339-013-7976-9

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