Abstract
This paper reports optical, photo-acoustic and electrical switching investigations of GeS2 amorphous thin films of different thicknesses, deposited on glass substrates in vacuum. The Tauc parameter (B 1/2) and Urbach energy (E U) have been determined from the transmittance spectra, to understand the changes in structural disorder; it is found that B 1/2 increases whereas E U decreases as the thickness of the films increases. Based on the results, it is suggested that bond re-arrangement, i.e. transformation from homopolar bonds to heteropolar bonds, takes place with increase in thickness. The thermal diffusivity values of GeS2 thin films also show the presence of a chemically ordered network in the GeS2 thin films. Further, it is found that these films exhibit memory-type electrical switching. The observed variation in the switching voltages has been understood on the basis of increase in chemical order.
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A.E. Owen, J.M. Robertson, C. Main, J. Non-Cryst. Solids 32, 29 (1979)
S. Prakash, S. Asokan, D.B. Ghare, J. Phys. D: Appl. Phys. 29, 2004 (1996)
S. Murugavel, S. Asokan, J. Mater. Res. 13, 2982 (1998)
M.K. Rabinal, S.S.K. Titus, S. Asokan, E.S.R. Gopal, M.O. Godzaev, N.T. Mamedov, Phys. Status Solidi B 178, 403 (1993)
M. Anbarasu, K.K. Singh, S. Asokan, Philos. Mag. 8, 599 (2008)
N. Sulitanu, Mater. Sci. Eng. B 83, 84 (2001)
C.L. Dargan, P. Burton, J. Mater. Sci. 9, 1595 (1974)
H.K.C. Chan, G.D. Pitt, M.K.R. Vyas, J. Non-Cryst. Solids 17, 401 (1975)
S.R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968)
M. Lankhorst, B. Ketelaars, R. Wolters, Nat. Mater. 4, 347 (2005)
A. Pirovano, A.L. Lacaita, D. Merlani, A. Benvenuti, F. Pellizzer, R. Bez, IEEE Trans. Electron Devices 51, 452 (2004)
R. Aravinda Narayanan, S. Asokan, A. Kumar, Phys. Rev. B 63, 092203 (2001)
M. Anbarasu, K.K. Singh, S. Asokan, J. Non-Cryst. Solids 354, 3369 (2008)
A. Mathew, J. Ravi, K.N. Madhusoodanan, K.P.R. Nair, T.M.A. Rasheed, Appl. Surf. Sci. 227, 410 (2004)
J.C. de Lima, N. Cella, L.C.M. Miranda, C. Chying An, A.H. Franzan, N.F. Leite, Phys. Rev. B 46, 14186 (1992)
D.M. Todorovic, P.M. Nikolic, D.G. Vasiljevic, M.D. Dramicanin, J. Appl. Phys. 76, 4012 (1994)
P. Pattanayak, N. Manikandan, M. Paulraj, S. Asokan, J. Phys. Condens. Matter 19, 036224 (2007)
S.J. Ikhmayies, R.N. Ahmad-Bitar, Renew. Energy 49, 143 (2013)
R. Moubah, S. Colis, M. Gallart, G. Schmerber, P. Gilliot, A. Dinia, J. Lumin. 132, 457 (2012)
W.F. Zhang, Y.B. Huang, M.S. Zhang, Appl. Surf. Sci. 158, 185 (2000)
R.T.A. Kumar, P. Chithra Lekha, B. Sundarakannan, D. Pathinettam Padiyan, Philos. Mag. 92, 1422 (2012)
J. Tauc, R. Grigorocivi, A. Vanchu, Phys. Status Solidi 15, 627 (1966)
J. Tauc, A. Menth, J. Non-Cryst. Solids 8–10, 569 (1972)
A.M. Bernal-Oliva, E. Marquez, J.M. Gonzalez-Leal, A.J. Gamez, R. Prieto-Alcon, R. Jimenez-Garay, J. Mater. Sci. Lett. 16, 665 (1997)
N.F. Mott, E.A. Davis, Electronics Processes in Non-crystalline Materials (Clarendon, Oxford, 1979), p. 428
Z.H. Khan, N. Salah, S. Habib, A.A. Al-Ghamdi, S.A. Khan, Opt. Laser Technol. 44, 6 (2012)
E.S.M. Goh, T.P. Chen, C.Q. Sun, Y.C. Liu, J. Appl. Phys. 107, 024305 (2010)
F. Urbach, Phys. Rev. 92, 1324 (1953)
M.M. Hafiz, A.H. Moharram, A.A. Abu-Sehly, Appl. Phys. A, Mater. Sci. Process. 66, 217 (1998)
A. Kumar, P. Heera, P. Sharma, P.B. Barman, R. Sharma, J. Non-Cryst. Solids 358, 3223 (2012)
R. Murri, L. Schiavulli, N. Pinto, T. Ligonzo, J. Non-Cryst. Solids 139, 60 (1992)
K. Maheshvaran, P.K. Veeran, K. Marimuthu, Solid State Sci. 17, 54 (2013)
Q. Liu, F. Gan, Chin. Sci. Bull. 47, 1428 (2002)
M. Fadel, A.A. Nijim, H.T. El-Shair, Vacuum 46, 1275 (1995)
R. Naik, R. Ganesan, K.V. Adarsh, K.S. Sangunni, V. Takats, S. Kokenyesi, J. Non-Cryst. Solids 355, 1939 (2009)
A.M. El-Naggar, Opt. Laser Technol. 33, 237 (2001)
K. Jeyadheepan, P. Palanichamy, V. Swaminathan, M. Jayachandran, C. Sanjeeviraja, Appl. Phys. A, Mater. Sci. Process. 98, 919 (2010)
C.M. Bhandari, D.M. Rowe, Thermal Conduction in Semiconductors (Wiley, New York, 1988), p. 59
C. Das, M.G. Mahesha, G. Mohan Rao, S. Asokan, Thin Solid Films 520, 2278 (2012)
C. Das, M.G. Mahesha, G. Mohan Rao, S. Asokan, Appl. Phys. A 106, 989 (2012)
R. Aravinda Narayanan, S. Asokan, A. Kumar, Phys. Rev. B 63, 092203 (2001)
C.C. Huang, B. Gholipour, J.Y. Ou, K. Knight, D.W. Hewak, Electron. Lett. 47, 4 (2011)
H. Lee, Y.K. Kim, D. Kim, D.-H. Kang, IEEE Trans. Magn. 41, 1034 (2005)
B.J. Madhu, H.S. Jayanna, S. Asokan, J. Non-Cryst. Solids 355, 459 (2009)
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The authors gratefully acknowledge the University Grants Commission (UGC), New Delhi, Government of India, for financial support under the UGC project no. 37-270/2009(SR).
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Ananth Kumar, R.T., Das, C., Asokan, S. et al. Optical, photo-acoustic and electrical switching studies of amorphous GeS2 thin films. Appl. Phys. A 115, 1151–1158 (2014). https://doi.org/10.1007/s00339-013-7976-9
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DOI: https://doi.org/10.1007/s00339-013-7976-9