Abstract
Two designed structures of ternary Al0.5Ga0.5Sb and AlSb/GaSb superlattice (SL) buffers were prepared by molecular beam epitaxy. Double crystal X-Ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the material quality and observe the threading dislocation (TD) spreading behaviors. It was found that despite the wider full width at half-maximum (FWHM) of the w-rocking curve obtained in the SL buffer compared with the AlGaSb buffer, the stronger the TD filter ability enabled the SL buffer to block the defects to beneath the thickness around 500 nm. This result suggests the AlSb/GaSb SL buffer possessed the superiority in the fabrication of antimony (Sb) based microelectronic devices.
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Acknowledgements
This work was supported by the Natural Science Foundation of China (Grant Nos. 61106013, 61275107, and 11104226), the National High Technology Research and Development Program of China (Grant No. 2009AA033101), and the National Basic Research Program of China (Grant Nos. 2010CB327501 and 2011CB925604).
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Shi, Z., Wang, L., Cui, Y. et al. Suppressing the spread length of threading dislocations in AlSb/GaSb superlattice grown on (001) InP substrate. Appl. Phys. A 115, 1239–1243 (2014). https://doi.org/10.1007/s00339-013-7967-x
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DOI: https://doi.org/10.1007/s00339-013-7967-x