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Physical and dispersive optical characteristics of ZrON/Si thin-film system

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Abstract

To date, the complex evaluation of physical and dispersive optical characteristics of the ZrON/Si film system has yet been reported. Hence, ZrON thin films have been formed on Si(100) substrates through oxidation/nitridation of sputtered metallic Zr in N2O environment at 500, 700, and 900 ∘C. Physical properties of the deposited films have been characterized by X-ray diffractometry (XRD), Fourier transform infrared (FTIR) spectroscopy, reflection high-energy electron diffraction (RHEED), and spectroscopic ellipsometry (SE). It has been shown that ZrON/Si thin films without optical absorption can be prepared by oxidation/nitridation reaction in N2O environment at 700–900 ∘C.

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Acknowledgements

This study was financially supported by the University of Malaya through the UMRG programme (RP013D-13AET) and PRPUM (CG022-2013).

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Authors and Affiliations

  1. Centre of Advanced Materials, Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603, Kuala Lumpur, Malaysia

    Yew Hoong Wong

  2. Centre of Advanced Manufacturing and Material Processing, University of Malaya, 50603, Kuala Lumpur, Malaysia

    Yew Hoong Wong

  3. Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia

    V. V. Atuchin

  4. Laboratory for Ellipsometry of Semiconductor Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk, 630090, Russia

    V. N. Kruchinin

  5. Electronic Materials Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia

    Kuan Yew Cheong

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  1. Yew Hoong Wong
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  2. V. V. Atuchin
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  3. V. N. Kruchinin
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  4. Kuan Yew Cheong
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Correspondence to Yew Hoong Wong.

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Wong, Y.H., Atuchin, V.V., Kruchinin, V.N. et al. Physical and dispersive optical characteristics of ZrON/Si thin-film system. Appl. Phys. A 115, 1069–1072 (2014). https://doi.org/10.1007/s00339-013-7947-1

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  • DOI: https://doi.org/10.1007/s00339-013-7947-1

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