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Improved performances in low-voltage-driven InGaZnO thin film transistors using a SiO2 buffer layer insertion

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Abstract

In this paper, we report the device characteristics of indium gallium zinc oxide (IGZO) thin film transistors (TFTs) with high-κ lanthanum aluminate (LaAlO3) based gate insulators. The IGZO TFT with single LaAlO3 gate insulator has an operation voltage as low as 1.5 V but suffers a low on-off-state drive current ratio (I on/I off) of 1×103, a large subthreshold swing (SS) of 0.405 V/dec and a small field effect mobility (μ FE) of 0.84 cm2/V sec. Inserting a SiO2 buffer layer between IGZO active channel layer and LaAlO3 gate insulator results in a reduced effective dielectric constant but with significant improved characteristics including a high I on/I off of 6.2×104, a small SS of 0.113 V/dec and a large μ FE of 5.2 cm2/V sec. Such good performances can be attributed to the lowered gate leakage and reduced interface trap issue owing to the smooth SiO2 buffer layer insertion.

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Acknowledgements

The authors would like to thank Prof. A. Chin from National Chiao Tung University and Dr. C.H. Cheng from National Taiwan Normal University for their support and technical help in experiments.

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Authors and Affiliations

  1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Z. W. Zheng

  2. Institute of Photonic System, National Chiao Tung University, Hsinchu, 300, Taiwan

    Y. C. Chen

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  1. Z. W. Zheng
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  2. Y. C. Chen
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Correspondence to Z. W. Zheng.

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Zheng, Z.W., Chen, Y.C. Improved performances in low-voltage-driven InGaZnO thin film transistors using a SiO2 buffer layer insertion. Appl. Phys. A 115, 937–941 (2014). https://doi.org/10.1007/s00339-013-7900-3

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  • DOI: https://doi.org/10.1007/s00339-013-7900-3

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