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Raman mapping of laser-induced changes and ablation of InAs nanowires

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Abstract

Indium arsenic (InAs) nanowires were irradiated with a focused laser beam, followed by in situ Raman spectroscopy mapping and scanning electron microscopy imaging to investigate the changes of the nanowires due to laser irradiation. It was found that laser irradiation with the power intensity above a certain threshold causes arsenic (As) atoms to disintegrate from InAs and accumulate on the surface of the nanowire; the accumulated As atoms evaporate under the continued laser irradiation. This process reduces the As content in the nanowire. The reduction of As content, in turn, lowers the melting temperature of the nanowire locally and facilitates laser ablation, which eventually fractures the nanowire. The laser irradiation induced changes of the InAs nanowires are attributed to the local temperature rises due to the irradiation, as confirmed by the Raman peak shifts. The results from this work show that in situ Raman spectroscopy mapping can provide detailed information about the entire process of laser-induced change and ablation of InAs nanowires and has the potential to become a powerful tool for the characterization of laser modification of nanowires and other nanometer-sized objects.

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Acknowledgements

We thank Zheng-yu Lu and Jie Wu for experimental help. This work was supported by Chinese Academy of Science International Partnership Program (CAS/SAFEA) and by Creative Research Program and by National Basic Research Program of China (Grant No. 2011CBA0900) and STCSM (Grant No. 09ZR1436 000). D-M Zhu is supported part by the US Army Research Office under the Contract W911NF-10-1-0476, and by a Grant from Agilent Technologies, LLC.

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Authors and Affiliations

  1. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China

    Jiayu He, Pingping Chen, Wei Lu & Ning Dai

  2. Department of Physics, University of Missouri–Kansas City, Kansas City, MO, 64110, USA

    Da-Ming Zhu

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  1. Jiayu He
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  2. Pingping Chen
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Correspondence to Da-Ming Zhu.

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He, J., Chen, P., Lu, W. et al. Raman mapping of laser-induced changes and ablation of InAs nanowires. Appl. Phys. A 115, 885–893 (2014). https://doi.org/10.1007/s00339-013-7884-z

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