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Investigation of growth behavior and properties of Si nanowires grown at various supply times of Ar gas current

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Abstract

Silicon nanowires (SiNWs) were synthesized on gold-coated silicon substrates by a very high frequency plasma enhanced chemical vapor deposition technique. The influence of supply time of Ar gas current on morphology, microstructure and optical properties of the SiNWs was investigated by means of field emission scanning electron microscopy, transmission electron microscopy, X-ray diffraction and photoluminescence. The lengths and density of the SiNWs decrease with an increase in the supply time of flowing Ar gas. The results revealed that the morphologies of the SiNWs strongly depended on the time of flowing Ar gas.

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Authors and Affiliations

  1. Nano & Biotechnology Research Group, Faculty of Basic Science, University of Mazandaran, Babolsar, Iran

    Habib Hamidinezhad

  2. Institute of High Voltage & High Current (IVAT), Universiti Teknologi Malaysia, 81310, Johor Bahru, Malaysia

    Zulkurnain Abdul-Malek

Authors
  1. Habib Hamidinezhad
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  2. Zulkurnain Abdul-Malek
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Correspondence to Habib Hamidinezhad or Zulkurnain Abdul-Malek.

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Hamidinezhad, H., Abdul-Malek, Z. Investigation of growth behavior and properties of Si nanowires grown at various supply times of Ar gas current. Appl. Phys. A 115, 867–872 (2014). https://doi.org/10.1007/s00339-013-7881-2

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  • DOI: https://doi.org/10.1007/s00339-013-7881-2

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