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Doped SiO x emitter layer in amorphous/crystalline silicon heterojunction solar cell

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Abstract

In this work we propose to replace the emitter layer of the n-type doped a-Si:H/p-type doped crystalline silicon heterojunction solar cell, with an n-type doped SiO x amorphous oxide layer. The n-type doped SiO x :H shows a lower activation energy and higher carrier mobility value with respect to the n-type doped a-Si:H. Moreover, higher transmission, below 500 nm of wavelength, and higher conductivity are measured. The relevance of transparency of the (n) a-SiO x :H has been studied using that film in solar cells. The electrical parameters revealed a solar cell efficiency of 15.8 %. Moreover, the effect of TCO as a front side cell electrode is considered and discussed on the base of its workfunction when applied on top of the n-type doped SiO x emitter layer using also numerical simulations.

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Authors and Affiliations

  1. ENEA Casaccia Research Centre, Rome, Italy

    M. Izzi, M. Tucci, L. Serenelli & P. Mangiapane

  2. ENEA Portici Research Centre, Portici, NA, Italy

    M. Della Noce, I. Usatii, E. Esposito, L. V. Mercaldo & P. Delli Veneri

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  1. M. Izzi
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  2. M. Tucci
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  3. L. Serenelli
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  4. P. Mangiapane
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  5. M. Della Noce
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  7. E. Esposito
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  8. L. V. Mercaldo
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  9. P. Delli Veneri
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Correspondence to M. Izzi.

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Izzi, M., Tucci, M., Serenelli, L. et al. Doped SiO x emitter layer in amorphous/crystalline silicon heterojunction solar cell. Appl. Phys. A 115, 705–712 (2014). https://doi.org/10.1007/s00339-013-7858-1

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  • DOI: https://doi.org/10.1007/s00339-013-7858-1

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