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An analytical model of anisotropic low-field electron mobility in wurtzite indium nitride

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Abstract

This paper presents a theoretical analysis of anisotropic transport properties and develops an anisotropic low-field electron analytical mobility model for wurtzite indium nitride (InN). For the different effective masses in the Γ–A and Γ–M directions of the lowest valley, both the transient and steady state transport behaviors of wurtzite InN show different transport characteristics in the two directions. From the relationship between velocity and electric field, the difference is more obvious when the electric field is low in the two directions. To make an accurate description of the anisotropic transport properties under low field, for the first time, we present an analytical model of anisotropic low-field electron mobility in wurtzite InN. The effects of different ionized impurity scattering models on the low-field mobility calculated by Monte Carlo method (Conwell–Weisskopf and Brooks–Herring method) are also considered.

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Acknowledgements

This work was supported in part by the Project of National Natural Science Foundation of China (Grant Nos. 60976068, 61076097) and Specialized Research Fund for the Doctoral Program of Higher Education (Grant No. 20110203110012).

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Authors and Affiliations

  1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an, 710071, China

    Shulong Wang, Hongxia Liu, Xin Song, Yulong Guo & Zhaonian Yang

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  1. Shulong Wang
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  2. Hongxia Liu
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  3. Xin Song
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Correspondence to Hongxia Liu.

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Wang, S., Liu, H., Song, X. et al. An analytical model of anisotropic low-field electron mobility in wurtzite indium nitride. Appl. Phys. A 114, 1113–1117 (2014). https://doi.org/10.1007/s00339-013-7798-9

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