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Ellipsometry studies of Si/Ge superlattices with embedded Ge dots

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Abstract

In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge superlattices (SLs) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SLs which were grown on silicon (Si) wafers having 〈111〉 crystallographic orientation. The results of the SE analysis between 200 nm and 1000 nm indicate that the SL system can effectively be described using an interdiffusion/intermixing model by assuming multicrystalline Si and Si1−x Ge x intermixing layers. The electronic transitions deduced from the analysis reveal Si-, Ge- and alloying-related critical energy points.

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Acknowledgements

This work was supported by the TUBITAK (TBAG) bilateral program under Contract No. 107T624 and the BMBF German Federal Ministry of Education and Research (Grant No. 03Z2HN12). The authors wish to acknowledge the partial funding of this work by the ‘MC2 ACCESS’ FP6 EU Program (Contract No. 026029). We would like to thank A. Frommfeld for supporting the MBE growth and Dr. M. Becker for Raman measurement.

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Authors and Affiliations

  1. TUBITAK-BILGEM National Research Institute of Electronics and Cryptology, Gebze, 41470, Kocaeli, Turkey

    Şeref Kalem

  2. Department of Microtechnology and Nanosciences, Chalmers University of Technology, Göteborg, Sweden

    Örjan Arthursson

  3. Department of Experimental Physics, Max Planck Institute, Halle (Saale), Germany

    Peter Werner

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  1. Şeref Kalem
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  2. Örjan Arthursson
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  3. Peter Werner
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Correspondence to Şeref Kalem.

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Kalem, Ş., Arthursson, Ö. & Werner, P. Ellipsometry studies of Si/Ge superlattices with embedded Ge dots. Appl. Phys. A 112, 555–559 (2013). https://doi.org/10.1007/s00339-013-7781-5

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