Abstract
A report on the fabrication and characterization of high performance conventional and ring-shaped AlGaN/GaN Schottky barrier diode on Si is presented. The resulting device exhibited low leakage current, which led to a detectivity performance of 3.48×1013 and 1.76×1013 cm Hz1/2 W−1, respectively, for both conventional and ring-shaped Schottky diode. The differential resistances of both devices were obtained at approximately 1.37×1012 and 1.41×1013 Ω, respectively. The zero bias peak responsivities of conventional and ring-shaped Schottky diodes were estimated to be 3.18 and 2.08 A cm−2/W, respectively. The typical UV to visible rejection ratio was observed over three orders of magnitude at zero bias. The C–V measurements was used to calculate and analyze the polarization sheet charge density of the AlGaN barrier layer by using self-consistently solving Schrodinger’s and Poisson’s equations. It is demonstrated that the ring shape of the Schottky barrier has higher polarization sheet charge density, which has the consequence that the Schottky shape has influence on the strain of the AlGaN barrier layer.
Similar content being viewed by others
References
H. Miyamoto, Phys. Status Solidi C 3, 2254 (2006)
C. Mizue, Y. Hori, M. Miczek, T. Hashizume, Jpn. J. Appl. Phys. 50, 021001 (2011)
N. Biyikli, O. Aytur, I. Kimukin, T. Tut, E. Ozbay, Appl. Phys. Lett. 81, 3272 (2002)
E. Monroy, F. Calle, J.L. Pau, E. Munoz, F. Omnes, B. Beaumont, P. Gibart, J. Cryst. Growth 230, 537 (2001)
C.J. Collins, T. Li, D.J.H. Lambert, M.M. Wong, R.D. Dupuis, J.C. Campbell, Appl. Phys. Lett. 77, 2810 (2000)
Y. Huang, D.J. Chen, H. Lu, H.B. Shi, P. Han, R. Zhang, Y.D. Zheng, Appl. Phys. Lett. 96, 243503 (2010)
D.G. Zhao, S. Zhang, D.S. Jiang, J.J. Zhu, Z.S. Liu, H. Wang, S.M. Zhang, B.S. Zhang, H. Yang, J. Appl. Phys. 110, 053701 (2011)
S.J. Chang, H. Hung, Y.C. Lin, M.H. Wu, H. Kuan, R.M. Lin, Jpn. J. Appl. Phys. 46, 2471 (2007)
H. Jiang, T. Egawa, Appl. Phys. Lett. 90, 121121 (2007)
Y.Z. Chiou, Y.C. Lin, C. K. Wang, IEEE Electron Device Lett. 28, 264 (2007)
P.E. Malinowski, J.Y. Duboz, P.D. Moor, K. Minoglou, J. John, S.M. Horcajo, F. Semond, E. Frayssinet, P. Verhoeve, M. Esposito, B. Giordanengo, A. BenMoussa, R. Mertens, C. Van Hoof, Appl. Phys. Lett. 98, 141104 (2011)
A. Osinsky, S. Gangopadhyay, J.W. Yang, R. Gaska, D. Kuksenkov, H. Temkinc, I.K. Shmagin, Y.C. Chang, J.F. Muth, Appl. Phys. Lett. 72, 551 (1998)
K.Y. Park, B.J. Kwon, Y.H. Cho, S.A. Lee, J. Appl. Phys. 98, 124505 (2005)
E.H. Rhoderick, Metal–Semiconductor Contacts. (Oxford University Press, Oxford, 1978)
H. Norde, J. Appl. Phys. 50, 5052 (1979)
S.K. Cheung, N.W. Cheung, Appl. Phys. Lett. 49, 85 (1986)
M.P. Hernandez, C.F. Alonso, J. Phys. D, Appl. Phys. 34, 1157 (2001)
Y.R. Jung, J.K. Kim, J.H. Lee, Y.H. Lee, M.B. Lee, J.H. Lee, S.H. Hahm, Phys. Status Solidi C 0, 99 (2002)
P.E. Malinowski, J.Y. Duboz, P.D. Moor, J. John, K. Minoglou, P. Srivastava, H. Abdul, M.K. Patel, H. Osman, F. Semond, E. Frayssinet, J.F. Hochedez, B. Giordanengo, C.V. Hoof, R. Mertens, Phys. Status Solidi C 8, 2476 (2011)
S. Donati, Photodetectors: Devices, Circuits, and Applications (Prentice Hall, New Jersey, 2000)
S.J. Chang, K.H. Lee, P.C. Chang, Y.C. Wang, C.H. Kuo, S.L. Wu, IEEE Sens. J. 9, 87 (2009)
A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, A.M. Dabiran, A.M. Wowchak, A.V. Osinsky, B. Cui, P.P. Chow, S.J. Pearton, Appl. Phys. Lett. 91, 232116 (2007)
S. Saadaoui, M.M.B. Salem, M. Gassoumi, H. Maaref, C. Gaquiere, J. Appl. Phys. 110, 013701 (2011)
W. Chikhaoui, J.M. Bluet, C. Bru-Chevallier, C. Dua, R. Aubry, Phys. Status Solidi C 7, 92 (2010)
J. Zhao, Z. Lin, T.D. Corrigan, Z. Wang, Z. You, Z. Wang, Appl. Phys. Lett. 91, 173507 (2007)
Z. Lin, W. Lu, J. Lee, D. Liu, J.S. Flynn, G.R. Brandes, Appl. Phys. Lett. 82, 4364 (2007)
O. Ambacher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, W.J. Schaff, L.F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999)
E.T. Yu, G.J. Sullivan, P.M. Asbeck, C.D. Wang, D. Qiao, S.S. Lau, Appl. Phys. Lett. 71, 2794 (1997)
G. Martin, A. Botchkarev, A. Rockett, H. MorKoc, Appl. Phys. Lett. 68, 2541 (1996)
D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, R. Hopler, R. Dimitrov, O. Ambacher, M. Stutzmann, J. Appl. Phys. 82, 5090 (1997)
P.D. Ye, B. Yang, K.K. Ng, J. Bude, G.D. Wilk, S. Halder, J.C.M. Hwang, Appl. Phys. Lett. 86, 063501 (2005)
Acknowledgements
This work is supported in part by the International Program of Regional Innovation Cluster Program “Tokai Region Nanotechnology Manufacturing Cluster” and the Global COE Program “Frontiers of Intelligent Sensing” of the Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT). Part of the experiments, particularly device fabrication processing, were carried out at the LSI facilities in EIIRIS, Toyohashi Tech. The authors would like to thanks Mr. Masaki Kondo, Mr. Ryuichi Tsuzuki, and Dr. Chang Yong Lee for experimental assistance.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kumar, M., Sekiguchi, H., Okada, H. et al. Influence of contact shape on AlGaN/GaN Schottky diode prepared on Si with thick buffer layer. Appl. Phys. A 112, 847–853 (2013). https://doi.org/10.1007/s00339-013-7769-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-013-7769-1