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High performance IGZO/TiO2 thin film transistors using Y2O3 buffer layers on polycarbonate substrate

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Abstract

In this work, we fabricate IGZO TFT devices on flexible substrate at room temperature. The IGZO/TiO2 TFT has small subthreshold swing of 0.16 V/dec, but suffers large gate leakage and negative threshold voltage. However, the TiO2 TFT with Y2O3 buffer layers shows improved characteristics including a low threshold voltage of 0.55 V, a small sub-threshold swing of 0.175 V/decade and high field-effect mobility of 43 cm2/Vs. Such good performance can be attributed to the enhanced capacitance density and lowered gate leakage owing to the integration of large band gap Y2O3 and low-temperature higher-κ TiO2.

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Authors and Affiliations

  1. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan

    H. H. Hsu & C. Y. Chang

  2. Department of Mechatronic Technology, National Taiwan Normal University, Taipei, 106, Taiwan

    C. H. Cheng

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  1. H. H. Hsu
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  2. C. Y. Chang
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  3. C. H. Cheng
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Correspondence to C. H. Cheng.

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Hsu, H.H., Chang, C.Y. & Cheng, C.H. High performance IGZO/TiO2 thin film transistors using Y2O3 buffer layers on polycarbonate substrate. Appl. Phys. A 112, 817–820 (2013). https://doi.org/10.1007/s00339-013-7680-9

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  • DOI: https://doi.org/10.1007/s00339-013-7680-9

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