Abstract
The next generation of magnetic memories requires an ideal spin-polarised electron source, achievable by using a half-metallic Heusler-alloy film. For Heusler-alloy film implementation, it is critical to realise both large volumes of coherent magnetisation reversal and high interfacial atomic ordering. In this review we present solutions to satisfy these requirements by measuring activation volumes and observing cross-sectional atomic structures. We find that polycrystalline thin films possess 10 times larger activation volumes than epitaxial ones and also form the perfectly ordered crystalline phase. These features are very useful for the application of Heusler-alloy films in a future magnetic memory.
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Acknowledgements
The authors would like to thank Prof. Kevin O’Grady for a fruitful discussion.
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Hirohata, A., Sagar, J., Lari, L. et al. Heusler-alloy films for spintronic devices. Appl. Phys. A 111, 423–430 (2013). https://doi.org/10.1007/s00339-013-7679-2
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DOI: https://doi.org/10.1007/s00339-013-7679-2