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Perpendicularly magnetized Mn x Ga films: promising materials for future spintronic devices, magnetic recording and permanent magnets

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Abstract

In this article, we review the recent progress in synthesis, characterization and related spintronic devices of tetragonal Mn x Ga alloys with L10 or D022 ordering. After a brief introduction to the growing demands for perpendicularly magnetized materials and the prospective candidate of Mn x Ga, we focus on lattice structures and synthesis of Mn x Ga bulks, and epitaxial growth, structural characterization and magnetic properties of Mn x Ga films. Then we discuss effective ways to tailor and improve the structure and magnetism for possible applications in spintronics, magnetic recording and permanent magnets. Finally, we outline the recent progress in spin polarization, magnetic damping, magneto-optical and magneto-transport behaviors and thermal and chemical stability of Mn x Ga films and related spintronic devices like magnetic tunneling junctions, spin valves and spin injectors into semiconductors.

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Acknowledgements

The authors thank the financial support from the NSFC under Grant No. 11127406 and MOST of China under Grant No. 2013CB922303.

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  1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China

    Lijun Zhu & Jianhua Zhao

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  1. Lijun Zhu
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Correspondence to Jianhua Zhao.

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Zhu, L., Zhao, J. Perpendicularly magnetized Mn x Ga films: promising materials for future spintronic devices, magnetic recording and permanent magnets. Appl. Phys. A 111, 379–387 (2013). https://doi.org/10.1007/s00339-013-7608-4

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