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Characterization of SiON/InP MOS structure with sulfidation, fluorination, and hydrogenation

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Abstract

Liquid phase deposited SiON film on InP with (NH4)2S treatment shows superior electrical characteristics due to the reduction of native oxides and sulfur passivation. Simultaneously, HF in SiON liquid phase deposition solution can effectively reduce residual native oxides on InP and provide fluorine passivation in SiON/InP film and interface. With post-metallization annealing (PMA), hydrogen ions can further passivate defects in SiON/InP film and interface. With these treatments, the PMA-LPD-SiON/(NH4)2S-treated InP MOS structure shows excellent electrical characteristics. With the physical thickness of 5.4 nm, the leakage current densities can be as low as 1.25×10−7 and 6.24×10−7 A/cm2 at ±2 V, and the interface state density is 3.25×1011 cm−2 eV−1.

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Acknowledgements

The authors would like to thank the National Science Council of Republic of China for their support under Contract No. 101-2221-E-033-080-MY3-MY3.

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Authors and Affiliations

  1. Department of Electronic Engineering, Chung Yuan Christian University, Chung Li City, 32023, Taiwan, ROC

    Ming-Kwei Lee & Chih-Feng Yen

  2. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, 80424, Taiwan, ROC

    Chi-Hsuan Cheng & Jung-Chan Lee

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  1. Ming-Kwei Lee
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Correspondence to Ming-Kwei Lee.

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Lee, MK., Yen, CF., Cheng, CH. et al. Characterization of SiON/InP MOS structure with sulfidation, fluorination, and hydrogenation. Appl. Phys. A 112, 1057–1062 (2013). https://doi.org/10.1007/s00339-012-7487-0

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