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Interaction of terahertz radiation with surface and interface plasmon–phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures

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Abstract

Surface phonon and plasmon–phonon polariton characteristics of GaAs, Al x Ga1−x As/GaAs, and GaN/Al2O3 layered structures are investigated by means of terahertz radiation reflection spectroscopy. The strong resonant absorption peaks and selective emission of the THz radiation dependent upon the lattice composition and free electron density in these layered structures are experimentally observed and analyzed.

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Acknowledgement

This research was supported by the Research Council of Lithuania (Grant No. MIP-091/2011-AM).

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Authors and Affiliations

  1. Semiconductor Physics Institute, Center for Physical Sciences and Technology, Vilnius, 01108, Lithuania

    J. Požela, K. Požela, A. Šilėnas, E. Širmulis & V. Jucienė

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  1. J. Požela
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  2. K. Požela
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  3. A. Šilėnas
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Correspondence to J. Požela.

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Požela, J., Požela, K., Šilėnas, A. et al. Interaction of terahertz radiation with surface and interface plasmon–phonons in AlGaAs/GaAs and GaN/Al2O3 heterostructures. Appl. Phys. A 110, 153–156 (2013). https://doi.org/10.1007/s00339-012-7473-6

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  • DOI: https://doi.org/10.1007/s00339-012-7473-6

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