Nanoscale gap filling for phase change material by pulsed deposition and inductively coupled plasma etching

Abstract

The gap filling of phase change material has become a critical module in the fabrication process of phase change random access memory (PCRAM) as the device continues to scale down to 45 nm and below. However, conventional physical vapor deposition process cannot meet the nanoscale gap fill requirement anymore. In this study, we found that the pulsed deposition followed by inductively coupled plasma etching process showed distinctly better gap filling capability and scalability than single-step deposition process. The gap filling mechanism of the deposit–etch–deposit (DED) process was briefly discussed. The film redeposition during etching step was the key ingredient of gap filling improvement. We achieved void free gap filling of phase change material on the 30 nm via with aspect ratio of 1:1 by two-cycle DED process. The results provided a rather comprehensive insight into the mechanism of DED process and proposed a potential gap filling solution for 45 nm and below technology nodes for PCRAM.