Abstract
65GeS2⋅25In2S3⋅10CsCl chalcohalide glass-ceramics containing β-In2S3 crystallites in the glassy matrix were prepared by traditional melt-quenching and subsequent heat-treatment at a fairly low temperature (T g +10 ∘C) for different durations. The transmission spectra show that the cut-off edge of short wavelength is red-shifted with the prolongation of annealing time, but remains an excellent transmittance in the mid-IR region. Meanwhile, its crystallization behavior was investigated systematically. The results show that the precipitation of β-In2S3 crystal phase is responsible for the first crystallization peak, and the second crystal phase is GeS2, which precipitated in the interior after a heat treatment at a high temperature (T g +70 ∘C). Furthermore, the crystallization mechanism was investigated using the non-isothermal method. The crystallization rate constant K value of 6.08×10−4 s−1 at 346 ∘C for the β-In2S3 phase is about three times larger than that of the GeS2 phase, indicating a much easier crystallization mechanism of β-In2S3 phase. Therefore, it is easy to control the precipitation of sole β-In2S3 crystallite, and to avoid interference of the second crystal phase GeS2.
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Acknowledgements
This work was partially supported by the International Science & Technology Cooperation Program of China (Grant No. 2011DFA12040), National Program on Key Basic Research Project (973 Program) (Grant No. 2012CB722703), the National NSFC (Grant No. 61108057), the Zhejiang Provincial NSFC (Grant Nos. R1101263 and Y4110322), and the NSFC of Ningbo City (Grant No. 2011A610091). It was also sponsored by K.C. Wong Magna Fund in Ningbo University.
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Li, Z., Lin, C., Nie, Q. et al. Controlled crystallization of β-In2S3 in 65GeS2⋅25In2S3⋅10CsCl chalcohalide glass. Appl. Phys. A 112, 939–946 (2013). https://doi.org/10.1007/s00339-012-7452-y
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DOI: https://doi.org/10.1007/s00339-012-7452-y