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Direct top–down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists

Abstract

We report the use of a fluoropolymer resist for the damage-free e-beam lithographic patterning of organic semiconductors. The same material is also shown to be suitable as an orthogonal electron beam resist for the patterning of top-contact electrodes on organic thin films. We demonstrate this by characterizing pentacene field-effect transistors with feature sizes as small as 100 nm and compare the performance of bottom- and top-contacted devices.

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Acknowledgements

This work was supported through BSR (2011-0021207), WCU (R31-2008-000-10057-0), and framework of international cooperation programs by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology.

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Correspondence to Sang Wook Lee.

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J. Park and J. Ho contributed equally to this work.

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Park, J., Ho, J., Yun, H. et al. Direct top–down fabrication of nanoscale electrodes for organic semiconductors using fluoropolymer resists. Appl. Phys. A 111, 1051–1056 (2013). https://doi.org/10.1007/s00339-012-7411-7

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  • DOI: https://doi.org/10.1007/s00339-012-7411-7

Keywords

  • Organic Semiconductor
  • Pentacene
  • Electron Beam Lithography
  • Hexyl Acetate
  • Organic Electronic Device