Abstract
We report the growth of Zn1−x Mg x O (x=0, 0.02, 0.05 at.%) nanowalls on sapphire substrates without any metal catalysts by a high-pressure pulsed laser deposition (PLD). The influences of the experimental parameters like growth pressure, temperature, and target-substrate distance on the growth of Zn1−x Mg x O nanowalls were systemically studied and the growth mechanism was discussed. It was found that large area and uniform Zn1−x Mg x O nanowalls with c-orientation can be grown on sapphire substrates when the growth temperature and pressure were 950 °C and 400 Torr at a target-substrate distance of 2 cm. A thin layer assisted vapor-solid (VS) process was proposed for Zn1−x Mg x O nanowalls growth. The photoluminescence spectrum shows the bandgap of Zn1−x Mg x O nanowall was effectively expanded together with defect-related levels formation in a forbidden gap, which also induced enhancement of visible emission.
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Acknowledgements
This work is supported by NSFC (51002065, 11174112) and Shandong Provincial Science Foundation for Disguised Youth Scholars (2012JQB01031; BS2010CL003). The Program-for-New-Century Excellent-Talents-in-University (NCET-11-1027), Ministry of Education, China, is also acknowledged. B.C. thanks the Taishan Scholar Professorship (TSHW20091007) tenured at the University of Jinan.
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Zhang, P., Chen, L., Zi, M. et al. Zn1−x Mg x O (0≤x≤0.05) nanowalls grown on catalyst-free sapphire substrates by high-pressure PLD and their photoluminescence properties. Appl. Phys. A 111, 1119–1124 (2013). https://doi.org/10.1007/s00339-012-7327-2
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DOI: https://doi.org/10.1007/s00339-012-7327-2