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Room-temperature pulsed laser deposition and dielectric properties of amorphous Bi3.95Er0.05Ti3O12 thin films on conductive substrates

Abstract

Bi3.95Er0.05Ti3O12 (BErT) thin films were prepared on Pt/Ti/SiO2/Si and indium-tin-oxide (ITO)-coated glass substrates at room temperature by pulsed laser deposition. These thin films were amorphous with uniform thickness. Excellent dielectric characteristics have been confirmed. The amorphous BErT thin films deposited on the Pt/Ti/SiO2/Si and ITO-coated glass substrates exhibited almost the same dielectric constant of 52 with a low dielectric loss of less than 0.02 at 1 kHz. Meanwhile, the dielectric properties of the thin films had an excellent bias voltage stability and thermal stability. The amorphous BErT thin films might have potential applications in microelectronic and optoelectronic devices.

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Acknowledgements

The authors gratefully acknowledge financial support from Natural Science Foundation of China (No. 51172289), Natural Science Foundation of Guangdong Province, China (No. 10251027501000007), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (No. 20110171130004).

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Correspondence to Dinghua Bao.

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Mo, Z., Miao, X., Liang, L. et al. Room-temperature pulsed laser deposition and dielectric properties of amorphous Bi3.95Er0.05Ti3O12 thin films on conductive substrates. Appl. Phys. A 111, 1113–1117 (2013). https://doi.org/10.1007/s00339-012-7326-3

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Keywords

  • Dielectric Constant
  • Dielectric Property
  • Dielectric Loss
  • Pulse Laser Deposition
  • High Dielectric Constant