Rapid thermal oxygen annealing formation of nickel silicide nanocrystals for nonvolatile memory


Discrete NiSi nanocrystals were synthesized by rapid thermal oxygen annealing of very thin Si/Ni/Si films on a SiO2 tunneling layer. They were used to fabricate metal–oxide–semiconductor capacitor memory. Electrical properties of the memory device such as programming, erasing and retention were characterized and good performance was achieved.

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The authors acknowledge the financial and program support of the DARPA/Defense Microelectronics Activity (DMEA) under agreement number H94003-10-2-1003 and the National Science Foundation (DMR-0807232). The cross-sectional TEM specimen was prepared by using a FEI Quanta 3D dual beam system in Calit2 Microscopy Center and TEM diffraction-contrast imaging was performed on a Philips CM-20 TEM in Materials Characterization Center at UCI. The HRTEM image was recorded in a FEI Titan 80-300 TEM. Dr. S.J. Xie is acknowledged for her assistance in HRTEM imaging and Mr. B Myers for his FIB recipe for TEM specimen preparation.

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Correspondence to Jianlin Liu.

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Zhou, H., Li, Z., Zheng, JG. et al. Rapid thermal oxygen annealing formation of nickel silicide nanocrystals for nonvolatile memory. Appl. Phys. A 109, 535–538 (2012). https://doi.org/10.1007/s00339-012-7299-2

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  • Rapid Thermal Annealing
  • Memory Window
  • Floating Gate
  • Vapor Solid Solid
  • Rapid Thermal Annealing Process