Abstract
A series of [Fe65Co35–O/SiO2] n multilayer thin films with different SiO2 separate layer thicknesses (t=0–3 nm) and fixed Fe65Co35–O layer thickness (5.4 nm) have been fabricated on (100) silicon and glass substrates by reactive magnetron co-sputtering. Microstructure analysis and magnetic measurement results show that Fe65Co35–O grain size and magnetic properties can be adjusted by varying the thickness of SiO2 layers. All films reveal an evident in-plane uniaxial magnetic anisotropy (IPUMA) when the thickness of SiO2 monolayer changes from t=0 to 3 nm. The hard axis coercivity (H ch) reveals a minimum of 9 Oe at t=1 nm while the easy axis coercivity (H ce) exhibits a minimum of 16 Oe at t=2 nm. For t=1 nm and 2 nm, the IPUMA fields (H k) are 95 and 207 Oe, the saturation magnetizations (M s) are 1.8 and 1.6 T, the real part of the complex permeabilities (below 3.0 GHz) are more than 217 and 104, and the ferromagnetic resonance frequencies (f r) are 3.6 and 5.2 GHz, respectively.
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Acknowledgements
This work was supported by the National Basic Research Program of China (No. 2012CB933103), the National Natural Science Foundation of China (Grant No. 50971108 and 51171158), and the National Science Fund for Distinguished Young Scholars (Grant No. 50825101).
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Wang, Y., Geng, H., Wang, J.B. et al. Magnetic properties of [Fe65Co35–O/SiO2] n multilayer thin films for high-frequency application. Appl. Phys. A 111, 569–574 (2013). https://doi.org/10.1007/s00339-012-7259-x
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DOI: https://doi.org/10.1007/s00339-012-7259-x