Applied Physics A

, Volume 110, Issue 2, pp 321–327 | Cite as

Nanosecond laser pulse induced vertical movement of thin gold films on silicon determined by a modified Michelson interferometer

  • F. Kneier
  • T. Geldhauser
  • E. Scheer
  • P. Leiderer
  • J. Boneberg


The vertical movement of a 40 nm thin Au film on a silicon substrate during intense nanosecond (ns) laser irradiation is determined on the nm vertical and ns time scales using an optimized Michelson interferometer. The balanced setup with two detectors uses the inverse interference signal and accounts for transient reflectivity changes during irradiation. We show that a change in phase shift upon reflection must be taken into account to gain quantitative results. Three distinct fluence regimes can be distinguished, characterized by transient reflectivity behavior, dewetting processes and film detachment. Maximum displacement velocities are determined to be 0.6 m/s and 1.9 m/s below and above the melting threshold of the metal, respectively. Flight velocities of detaching liquid films are found to be between 30 and 70 m/s for many nanoseconds.


Liquid Film Gold Film Reflectivity Change Nanosecond Time Scale Melting Threshold 
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We gratefully acknowledge the financial support of the Center of Applied Photonics (CAP) of the University of Konstanz as well as the SFB 767 of the DFG and the Strategic Japanese–German Cooperative Program of the JST and DFG.


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Copyright information

© Springer-Verlag 2012

Authors and Affiliations

  • F. Kneier
    • 1
  • T. Geldhauser
    • 1
  • E. Scheer
    • 1
  • P. Leiderer
    • 1
  • J. Boneberg
    • 1
  1. 1.University of KonstanzKonstanzGermany

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