Skip to main content
SpringerLink
Log in

Realization of transient memory-loss with NiO-based resistive switching device

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

A resistive switching device based on a nickel-rich nickel oxide thin film, which exhibits inherent learning and memory-loss abilities, is reported in this work. The conductance of the device gradually increases and finally saturates with the number of voltage pulses (or voltage sweepings), which is analogous to the behavior of the short-term and long-term memory in the human brain. Furthermore, the number of the voltage pulses (or sweeping cycles) required to achieve a given conductance state increases with the interval between two consecutive voltage pulses (or sweeping cycles), which is attributed to the heat diffusion in the material of the conductive filaments formed in the nickel oxide thin film. The phenomenon resembles the behavior of the human brain, i.e., forgetting starts immediately after an impression, a larger interval of the impressions leads to more memory loss, thus the memorization needs more impressions to enhance.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others

References

  1. J. Von-Neumann, IEEE Ann. Hist. Comput. 10, 243 (1989)

    Article  MathSciNet  MATH  Google Scholar 

  2. J. Backus, Commun. ACM 21, 613 (1978)

    Article  MathSciNet  MATH  Google Scholar 

  3. C. Mead, Proc. IEEE 78, 1629 (1900)

    Article  Google Scholar 

  4. A. Masaki, Y. Hirai, M. Yamada, IEEE Circuits Devices Mag. 6, 12 (1990)

    Article  Google Scholar 

  5. T. Hasegawa, T. Ohno, K. Terabe, T. Tsuruoka, T. Nakayama, J.K. Gimzewski, M. Aono, Adv. Mater. 22, 1831 (2010)

    Article  Google Scholar 

  6. Y. Liu, T.P. Chen, Z. Liu, Y.F. Yu, Q. Yu, P. Li, S. Fung, Appl. Phys. A 105, 855 (2011)

    Article  ADS  Google Scholar 

  7. T. Ohno, T. Hasegawa, T. Tsuruoka, K. Terabe, J.K. Gimzewski, M. Aono, Nat. Mater. 10, 591 (2011)

    Article  ADS  Google Scholar 

  8. J.L. McGaugh, Science 287, 248 (2000)

    Article  ADS  Google Scholar 

  9. D.C. Kim, S. Seo, S.E. Ahn, D.-S. Suh, M.J. Lee, B.-H. Park, I.K. Yoo, I.G. Baek, H.-J. Kim, E.K. Yim, J.E. Lee, S.O. Park, H.S. Kim, U.-I. Chung, J.T. Moon, B.I. Ryu, Appl. Phys. Lett. 88, 202102 (2006)

    Article  ADS  Google Scholar 

  10. A. Sawa, Mater. Today 11, 28 (2008)

    Article  Google Scholar 

  11. R. Waser, M. Aono, Nat. Mater. 6, 833 (2007)

    Article  ADS  Google Scholar 

  12. M.-J. Lee, S. Han, S.H. Jeon, B.H. Park, B.S. Kang, S.-E. Ahn, K.H. Kim, C.B. Lee, C.J. Kim, I.-K. Yoo, D.H. Seo, X.-S. Li, J.-B. Park, J.-H. Lee, Y. Park, Nano Lett. 9, 1476 (2009)

    Article  ADS  Google Scholar 

  13. M.C. Ni, S.M. Guo, H.F. Tian, Y.G. Zhao, J.Q. Li, Appl. Phys. Lett. 91, 183502 (2007)

    Article  ADS  Google Scholar 

  14. W.-L. Jang, Y.-M. Lu, W.-S. Hwang, T.-L. Hsiung, H.P. Wang, Appl. Phys. Lett. 94, 062103 (2009)

    Article  ADS  Google Scholar 

  15. S. Seo, M.J. Lee, D.H. Seo, E.J. Jeoung, D.-S. Suh, Y.S. Joung, I.K. Yoo, I.R. Hwang, S.H. Kim, I.S. Byun, J.-S. Kim, J.S. Choi, B.H. Park, Appl. Phys. Lett. 85, 5655 (2004)

    Article  ADS  Google Scholar 

  16. K. Tsunoda, K. Kinoshita, H. Noshiro, Y. Yamazaki, T. Jizuka, Y. Ito, A. Takahashi, A. Okano, Y. Sato, T. Fukano, M. Aoki, Y. Sugiyama, Tech. Dig. IEDM 767 (2007)

Download references

Acknowledgements

This work has been financially supported by the Young Scholar Fund of Sichuan under Project No. 2011JQ0002, and the National Research Foundation of Singapore under Project NRF-G-CRP 2007-01.

Author information

Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, P.R. China

    S. G. Hu, Y. Liu, Q. Yu & L. J. Deng

  2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore

    T. P. Chen & Z. Liu

  3. Graduate School of Engineering, Gunma University, 1-5-1 Tenjin, Kiryu, Gunma, 376-8515, Japan

    Y. Yin & Sumio Hosaka

Authors
  1. S. G. Hu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Y. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T. P. Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Z. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Q. Yu
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. L. J. Deng
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Y. Yin
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Sumio Hosaka
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Y. Liu.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Hu, S.G., Liu, Y., Chen, T.P. et al. Realization of transient memory-loss with NiO-based resistive switching device. Appl. Phys. A 109, 349–352 (2012). https://doi.org/10.1007/s00339-012-7179-9

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-012-7179-9

Keywords

Search

Navigation