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Electrical conduction and bipolar switching properties in transparent vanadium oxide resistive random access memory (RRAM) devices

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Abstract

In this study, the electrical conduction and bipolar switching properties in transparent vanadium oxide thin films are investigated and discussed. (110)-oriented vanadium oxide thin films were well deposited onto transparent ITO substrates for the possible development of applications in the structure of system-on-panel devices. For the as-deposited vanadium oxide thin films, they were prepared for 1 h by a rf magnetron sputtering method of rf power 130 W, chamber pressure 10 mTorr, substrate temperature 550 °C, and different oxygen concentrations. In addition, the Al/V2O5/ITO device presents reliable and bipolar switching behavior. The on/off ratio and switching cycling of two stable states are found and discussed. We suggest that the current–voltage characteristics are governed by ohmic contact and Poole−Frankel emission transport model mechanisms in low- and high-voltage regions, respectively.

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Acknowledgements

This work acknowledges the financial support of the National Science Council of the Republic of China (NSC 100-2221-E-272-003).

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Authors and Affiliations

  1. Department of Electronics Engineering and Computer Science, Tung-Fang Design University, Kaohsiung, Taiwan, ROC

    Kai-Huang Chen & Sean Wu

  2. Department of Physics, Military Academy, Feng-shan, Kaohsiung, 830, Taiwan, ROC

    Chin-Hsiung Liao

  3. Department of Mathematics and Physics, Chinese Air Force Academy, Kangshan, Kaohsiung, Taiwan, ROC

    Jen-Hwan Tsai

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  1. Kai-Huang Chen
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  2. Chin-Hsiung Liao
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  3. Jen-Hwan Tsai
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  4. Sean Wu
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Correspondence to Kai-Huang Chen.

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Chen, KH., Liao, CH., Tsai, JH. et al. Electrical conduction and bipolar switching properties in transparent vanadium oxide resistive random access memory (RRAM) devices. Appl. Phys. A 110, 211–216 (2013). https://doi.org/10.1007/s00339-012-7116-y

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