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Simulation analysis of the effects of defect density on the performance of p-i-n InGaN solar cell

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Abstract

This paper indicated a simulation study to optimizing the p-i-n InGaN homojunction solar cells. From the simulation results, it was found that optimized value of cell thickness is 1.3 μm and a maximum energy conversion about 20 % can be achieved in 1015 cm−3 defect concentration. It is shown that i-layer quality is a dominant factor in determining the performance of the cell. This result is consistent with the fact that InGaN p-i-n homojunction solar cell with higher densities of defects and dislocations exhibits a lower J sc and V oc, and consequently lower efficiency of the cell. Simulation results demonstrated that high-quality InGaN alloy is necessary to fabricate a high performance cell.

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Acknowledgements

The authors gratefully acknowledge to Dr. Marc Burgelman, University of Gent, Belgium, for providing the SCAPS simulation software.

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Authors and Affiliations

  1. Department of Solid State Physics, Faculty of Physics, University of Tabriz, Tabriz, Iran

    Hossein Movla & Davood Salami

  2. Azar Aytash Co., Technology Incubator, University of Tabriz, Tabriz, Iran

    Hossein Movla

  3. Young Researchers Club, Tabriz Branch, Islamic Azad University, Tabriz, Iran

    Seyed Vahid Sadreddini

Authors
  1. Hossein Movla
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  2. Davood Salami
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  3. Seyed Vahid Sadreddini
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Correspondence to Hossein Movla.

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Movla, H., Salami, D. & Sadreddini, S.V. Simulation analysis of the effects of defect density on the performance of p-i-n InGaN solar cell. Appl. Phys. A 109, 497–502 (2012). https://doi.org/10.1007/s00339-012-7062-8

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  • DOI: https://doi.org/10.1007/s00339-012-7062-8

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