Abstract
Silicon nanowires (SiNWs) were produced by an electroless method on FZ-Si (100) wafer, in HF/AgNO3 solution. The influence of etching time and temperature on SiNWs morphology were studied using FESEM images. Optical properties were also investigated by optical absorption spectroscopy and low-temperature photoluminescence at 4.2 K. Considering their role as active regions, photovoltaic properties of SiNWs solar cells were studied for their different lengths. Photovoltaic measurements were taken in 1 sun condition under AM 1.5 illumination supplied by a solar simulator. Measurements indicated a reduction in efficiency as SiNWs length increased, which might be attributed to increased dangling states on nanowires surfaces.
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Acknowledgements
The authors gratefully acknowledge the financial support of research council, at the University of Kashan, and Prof. V.F. Gremenok of ‘Belarusian Academy of Science’ for his technical assistance with photoluminescence measurements.
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Farangi, M., Zahedifar, M., Mozdianfard, M.R. et al. Effects of silicon nanowires length on solar cells photovoltaic properties. Appl. Phys. A 109, 299–306 (2012). https://doi.org/10.1007/s00339-012-7054-8
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DOI: https://doi.org/10.1007/s00339-012-7054-8